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HN58V66ATI-10 PDF预览

HN58V66ATI-10

更新时间: 2024-11-28 22:48:35
品牌 Logo 应用领域
瑞萨 - RENESAS 内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
28页 222K
描述
64k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature Range version

HN58V66ATI-10 数据手册

 浏览型号HN58V66ATI-10的Datasheet PDF文件第2页浏览型号HN58V66ATI-10的Datasheet PDF文件第3页浏览型号HN58V66ATI-10的Datasheet PDF文件第4页浏览型号HN58V66ATI-10的Datasheet PDF文件第5页浏览型号HN58V66ATI-10的Datasheet PDF文件第6页浏览型号HN58V66ATI-10的Datasheet PDF文件第7页 
HN58V65AI Series  
HN58V66AI Series  
HN58V65A-SR Series  
HN58V66A-SR Series  
64k EEPROM (8-kword × 8-bit)  
Ready/Busy function, RES function (HN58V66A)  
Wide Temperature Range version  
REJ03C0153-0300Z  
(Previous ADE-203-759B(Z) Rev.2.0)  
Rev. 3.00  
Feb.02.2004  
Description  
Renesas Technology’s HN58V65A series and HN58V66A series are electrically erasable and  
programmable EEPROM’s organized as 8192-word × 8-bit. They have realized high speed, low power  
consumption and high reliability by employing advanced MNOS memory technology and CMOS process  
and circuitry technology. They also have a 64-byte page programming function to make their write  
operations faster.  
Features  
Single supply: 2.7 to 5.5 V  
Access time:  
100 ns (max) at 2.7 V VCC < 4.5 V  
70 ns (max) at 4.5 V VCC 5.5 V  
Power dissipation:  
Active: 20 mW/MHz (typ)  
Standby: 110 µW (max)  
On-chip latches: address, data, CE, OE, WE  
Automatic byte write: 10 ms (max)  
Automatic page write (64 bytes): 10 ms (max)  
Ready/Busy  
Data polling and Toggle bit  
Data protection circuit on power on/off  
Rev.3.00, Feb.02.2004, page 1 of 26  

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