Datasheet > HN58V65A-SR

HN58V65A-SR

更新时间： 2022-11-24 21:45:07

品牌	Logo	应用领域
瑞萨 - RENESAS		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
28页	222K
描述
64k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature Range version

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HN58V65A-SR 数据手册

HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series

Capacitance (Ta = +25°C, f = 1 MHz)

Parameter

Symbol

Cin*¹

Cout*¹

Min



Typ



Max

Unit

Test conditions

Vin = 0 V

Input capacitance

Output capacitance



Vout = 0 V

Note: 1. This parameter is sampled and not 100% tested.

AC Characteristics

(Ta = −40 to +85°C, V_CC= 2.7 to 5.5 V: HN58V65AI/HN58V66AI,

Ta = −20 to +85°C, V_CC= 2.7 to 5.5 V: HN58V65A-SR/HN58V66A-SR)

Test Conditions

•

Input pulse levels :

0.4 V to 2.4 V (V_CC= 2.7 to 3.6 V), 0.4 V to 3.0 V (V_CC= 3.6 to 5.5 V)

0 V to V_CC(RES pin*²)

•

Input rise and fall time : ≤ 5 ns

Input timing reference levels : 0.8, 1.8 V

Output load : 1TTL Gate +100 pF

Output reference levels : 1.5 V, 1.5 V

Read Cycle 1 (2.7 ≤ V_CC< 4.5 V)

HN58V65AI/HN58V66AI

HN58V65A-SR/HN58V66A-SR

-10

Parameter

Symbol Min

Max

Unit Test conditions

Address to output delay

CE to output delay

OE to output delay

Address to output hold

t_ACC

t_CE

t_OE

t_OH



100

CE = OE = V_IL, WE = V_IH

OE = V_IL, WE = V_IH

CE = V_IL, WE = V_IH

CE = OE = V_IL, WE = V_IH

CE = V_IL, WE = V_IH



OE (CE) high to output float*¹t_DF

RES low to output float*^{1, 2}

RES to output delay*²

t_DFR

350

450

CE = OE = V_IL, WE = V_IH

CE = OE= V_IL, WE = V_IH

t_RR

Rev.3.00, Feb.02.2004, page 7 of 26

1...4 5 678 9 10...28

下载PDF

与HN58V65A-SR相关器件

型号	品牌	描述	获取价格	数据表
HN58V65AT-10	HITACHI	64 k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A)	获取价格
HN58V65AT-10	RENESAS	64 k EEPROM (8-kword × 8-bit) Ready/Busy Func	获取价格
HN58V65AT-10E	RENESAS	64 k EEPROM (8-kword × 8-bit) Ready/Busy Func	获取价格
HN58V65AT-10SR	RENESAS	64k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature	获取价格
HN58V65AT-10SR	HITACHI	EEPROM, 8KX8, 100ns, Parallel, CMOS, PDSO28, PLASTIC, TSOP-28	获取价格
HN58V65AT-10SRE	RENESAS	64k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature	获取价格