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HN58V66AT-10 PDF预览

HN58V66AT-10

更新时间: 2024-11-29 05:36:19
品牌 Logo 应用领域
瑞萨 - RENESAS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
28页 257K
描述
64 k EEPROM (8-kword × 8-bit) Ready/Busy Function, RES Function (HN58V66A)

HN58V66AT-10 数据手册

 浏览型号HN58V66AT-10的Datasheet PDF文件第2页浏览型号HN58V66AT-10的Datasheet PDF文件第3页浏览型号HN58V66AT-10的Datasheet PDF文件第4页浏览型号HN58V66AT-10的Datasheet PDF文件第5页浏览型号HN58V66AT-10的Datasheet PDF文件第6页浏览型号HN58V66AT-10的Datasheet PDF文件第7页 
HN58V65A Series  
HN58V66A Series  
64 k EEPROM (8-kword × 8-bit)  
Ready/Busy Function, RES Function (HN58V66A)  
REJ03C0149-0300Z  
(Previous ADE-203-539B (Z) Rev. 2.0)  
Rev. 3.00  
Dec. 04. 2003  
Description  
Renesas Technology's HN58V65A series and HN58V66A series are a electrically erasable and  
programmable EEPROM’s organized as 8192-word × 8-bit. They have realized high speed, low power  
consumption and high relisbility by employing advanced MNOS memory technology and CMOS process  
and circuitry technology. They also have a 64-byte page programming function to make their write  
operations faster.  
Features  
Single supply: 2.7 to 5.5 V  
Access time:  
100 ns (max) at 2.7 V VCC < 4.5 V  
70 ns (max) at 4.5 V VCC 5.5 V  
Power dissipation:  
Active: 20 mW/MHz (typ)  
Standby: 110 µW (max)  
On-chip latches: address, data, CE, OE, WE  
Automatic byte write: 10 ms (max)  
Automatic page write (64 bytes): 10 ms (max)  
Ready/Busy  
Data polling and Toggle bit  
Data protection circuit on power on/off  
Conforms to JEDEC byte-wide standard  
Reliable CMOS with MNOS cell technology  
Rev.3.00, Dec. 04.2003, page 1 of 26  

HN58V66AT-10 替代型号

型号 品牌 替代类型 描述 数据表
HN58V66AT-10E RENESAS

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