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HN2C01FU-GR(T5LFUF PDF预览

HN2C01FU-GR(T5LFUF

更新时间： 2024-11-11 19:45:47
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器光电二极管晶体管
页数 文件大小 规格书
3页 233K
描述
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

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HN2C01FU-GR(T5LFUF 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code：unknown风险等级：5.73
最大集电极电流 (IC)：0.15 A基于收集器的最大容量：3.5 pF
集电极-发射极最大电压：50 V配置：SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)：200JESD-30 代码：R-PDSO-G6
元件数量：2端子数量：6
最高工作温度：125 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：NPN功耗环境最大值：0.2 W
最大功率耗散 (Abs)：0.2 W表面贴装：YES
端子形式：GULL WING端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：80 MHzVCEsat-Max：0.25 V
Base Number Matches：1

HN2C01FU-GR(T5LFUF 数据手册

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HN2C01FU  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
HN2C01FU  
Unit: mm  
Audio Frequency General Purpose Amplifier Applications  
z Small package (dual type)  
z High voltage and high current : V  
= 50V, I = 150mA (max)  
C
CEO  
z High h  
: h  
= 120 to 400  
FE  
FE  
z Excellent h  
linearity  
: h  
(I = 0.1mA) / (I = 2mA)  
C C  
FE  
FE  
= 0.95 (typ.)  
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
60  
50  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
5
V
I
150  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
30  
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P *  
C
200  
T
j
125  
T
stg  
−55 to 125  
JEDEC  
―
―
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
JEITA  
TOSHIBA  
2-2J1B  
Weight: 6.8 mg (typ.)  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
* Total rating  
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)  
Test  
Circuit  
Characteristics  
Symbol  
Test Condition  
= 60V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
―
V
V
V
―
―
―
―
―
0.1  
―
2
0.1  
0.1  
400  
0.25  
―
μA  
μA  
―
V
CBO  
CB  
EB  
CE  
E
I
―
―
―
―
―
= 5V, I = 0  
C
EBO  
DC current gain  
h
= 6V, I = 2mA  
120  
―
FE (Note)  
C
Collector-emitter saturation voltage  
Transition frequency  
V
I
= 100mA, I =10mA  
C B  
CE (sat)  
f
V
V
= 10V, I = 1mA  
80  
―
MH  
z
T
CE  
C
Collector output capacitance  
C
= 10V, I = 0, f = 1MH  
E z  
3.5  
pF  
ob  
CB  
Note: h classification  
FE  
Y(Y): 120 to 240, GR(G): 200 to 400  
( ) marking symbol  
Marking  
Equivalent Circuit (top view)  
Start of commercial production  
1992-01  
1
2014-03-01  
123

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