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HN2D01FU(TE85L,F) PDF预览

HN2D01FU(TE85L,F)

更新时间: 2024-11-11 21:13:39
品牌 Logo 应用领域
东芝 - TOSHIBA 测试
页数 文件大小 规格书
4页 273K
描述
ARRAY OF INDEPENDENT DIODES,SOT-363

HN2D01FU(TE85L,F) 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.57最大正向电压 (VF):1.2 V
最高工作温度:125 °C最低工作温度:-55 °C
最大功率耗散:0.2 W最大重复峰值反向电压:85 V
最大反向电流:0.5 µA最大反向恢复时间:0.004 µs
反向测试电压:80 V子类别:Other Diodes
表面贴装:YESBase Number Matches:1

HN2D01FU(TE85L,F) 数据手册

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HN2D01FU  
TOSHIBA Diode Silicon Epitaxial Planar Type  
HN2D01FU  
Unit: mm  
Ultra High Speed Switching Application  
HN2D01FU is composed of 3 independent diodes.  
z Low forward voltage : V = 0.98V (typ.)  
z Fast reverse recovery time: t = 1.6ns (typ.)  
F (3)  
rr  
z Small total capacitance  
: C = 0.5pF (typ.)  
T
Pin Assignment (Top View)  
Marking  
JEDEC  
JEITA  
1-2T1C  
TOSHIBA  
Absolute Maximum Ratings (Ta = 25°C)  
Weight: 6.2mg (typ.)  
Characteristic  
Symbol  
Rating  
Unit  
Maximum (peak) reverse Voltage  
Reverse voltage  
V
85  
80  
V
V
RM  
V
R
Maximum (peak) forward current  
Average forward current  
Surge current (10ms)  
Power dissipation  
I
240 *  
80 *  
mA  
mA  
A
FM  
I
O
I
1 *  
FSM  
P
200  
mW  
°C  
°C  
Junction temperature  
T
j
125  
Storage temperature  
T
55 to 125  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
*:  
This is absolute maximum rating of single diode (Q1 or Q2 or Q3). In the case of using 2 ro 3 diodes, the  
absolute maximum ratings per diodes is 75 % of the single diode one.  
Start of commercial production  
1990-10  
1
2014-03-01  

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