5秒后页面跳转
捷配首页

Datasheet > HN2C01FEY
HN2C01FEY PDF预览

HN2C01FEY

更新时间： 2024-11-11 19:43:47
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器光电二极管晶体管
页数 文件大小 规格书
3页 225K
描述
TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2N1A, ES6, 6 PIN, BIP General Purpose Small Signal

阅读下载

中文翻译

获取价格

HN2C01FEY 技术参数

生命周期：Lifetime Buy包装说明：SMALL OUTLINE, R-PDSO-F6
针数：6Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.35
最大集电极电流 (IC)：0.15 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE)：120
JESD-30 代码：R-PDSO-F6元件数量：2
端子数量：6最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：NPN
最大功率耗散 (Abs)：0.1 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：60 MHzBase Number Matches：1

HN2C01FEY 数据手册

 浏览型号HN2C01FEY的Datasheet PDF文件第2页浏览型号HN2C01FEY的Datasheet PDF文件第3页 
HN2C01FE  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
HN2C01FE  
Unit: mm  
Audio Frequency General Purpose Amplifier Applications  
z
z
z
z
Small package (dual type)  
High voltage and high current : V  
= 50V, I = 150mA (max)  
CEO  
C
High h  
: h = 120 to 400  
FE  
FE  
Excellent h linearity : h (I = 0.1mA) / (I = 2mA) = 0.95 (typ.)  
FE  
FE  
C
C
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
60  
50  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
1.EMITTER1  
2.EMITTER2  
3.BASE2  
(E1)  
(E2)  
(B2)  
(C2)  
(B1)  
(C1)  
5
V
I
150  
mA  
mA  
mW  
°C  
°C  
C
4.COLLECTOR2  
5.BASE1  
Base current  
I
30  
B
6.COLLECTOR1  
Collector power dissipation  
Junction temperature  
Storage temperature range  
P *  
C
100  
T
j
150  
T
stg  
−55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
JEDEC  
―
―
JEITA  
TOSHIBA  
Weight: 3mg  
2-2N1A  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
* Total rating  
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 60V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
―
V
V
V
―
―
―
―
―
0.1  
―
2
0.1  
0.1  
400  
0.25  
―
μA  
μA  
―
V
CBO  
CB  
EB  
CE  
E
I
―
―
―
―
―
= 5V, I = 0  
C
EBO  
DC current gain  
h
= 6V, I = 2mA  
120  
―
FE (Note)  
C
Collector-emitter saturation voltage  
Transition frequency  
V
I
= 100mA, I =10mA  
C B  
CE (sat)  
f
V
V
= 10V, I = 1mA  
60  
―
MH  
z
T
CE  
C
Collector output capacitance  
C
= 10V, I = 0, f = 1MH  
E z  
―
pF  
ob  
CB  
Note: h classification Y(Y): 120 to 240, GR(G): 200 to 400 ( ) marking symbol  
FE  
Marking  
Equivalent Circuit (Top View)  
Type Name  
Rank  
h
6
5
4
3
FE  
L1Y  
Start of commercial production  
2000-06  
1
2
2014-03-01  
1
123

中文翻译

下载PDF

与HN2C01FEY相关器件

型号 品牌 获取价格 描述 数据表
HN2C01FE-Y TOSHIBA

获取价格

 		TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2N1A, ES6, 6 PIN,
HN2C01FEY(TE85L) TOSHIBA

获取价格

 		HN2C01FEY(TE85L)
HN2C01FU TOSHIBA

获取价格

 		NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
HN2C01FU_07 TOSHIBA

获取价格

 		Audio Frequency General Purpose Amplifier Applications
HN2C01FUGR ETC

获取价格

 		TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP
HN2C01FU-GR TOSHIBA

获取价格

 		暂无描述
HN2C01FU-GR(T5L,F) TOSHIBA

获取价格

 		TRANS 2NPN 50V 0.15A US6
HN2C01FU-GR(T5LFUF TOSHIBA

获取价格

 		Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
HN2C01FUGRTE85L TOSHIBA

获取价格

 		TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
HN2C01FUTE85L TOSHIBA

获取价格

 		TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose

与HN2C01FEY相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证