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HN2A01FU-Y(T5LCK,F PDF预览

HN2A01FU-Y(T5LCK,F

更新时间： 2024-11-11 14:51:07
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器光电二极管晶体管
页数 文件大小 规格书
3页 241K
描述
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon

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HN2A01FU-Y(T5LCK,F 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code：unknown风险等级：5.74
Is Samacsys：N最大集电极电流 (IC)：0.15 A
基于收集器的最大容量：7 pF集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE)：120
JESD-30 代码：R-PDSO-G6元件数量：2
端子数量：6最高工作温度：125 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：PNP
功耗环境最大值：0.2 W最大功率耗散 (Abs)：0.2 W
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：80 MHz
VCEsat-Max：0.3 VBase Number Matches：1

HN2A01FU-Y(T5LCK,F 数据手册

 浏览型号HN2A01FU-Y(T5LCK,F的Datasheet PDF文件第2页浏览型号HN2A01FU-Y(T5LCK,F的Datasheet PDF文件第3页 
HN2A01FU  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
HN2A01FU  
Unit: mm  
Audio Frequency General Purpose Amplifier Applications  
z Small package (dual type)  
z High voltage and high current : V  
= −50V, I = −150mA (max)  
C
CEO  
z High h  
z Excellent h  
: h  
:
= 120 to 400  
FE  
FE  
linearity  
FE  
h
(I = −0.1mA) / (I = −2mA) = 0.95 (typ.)  
C C  
FE  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 Common)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
−50  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
−50  
V
−5  
V
I
−150  
−30  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P *  
C
200  
T
j
125  
JEDEC  
―
―
T
stg  
−55 to 125  
JEITA  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
TOSHIBA  
2-2J1B  
Weight: 6.8 mg (typ.)  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
* Total rating  
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)  
Test  
Circuit  
Characteristics  
Symbol  
Test Condition  
= −50V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
―
V
V
V
―
―
―
―
−0.1  
−0.1  
400  
−0.3  
―
μA  
μA  
―
V
CBO  
CB  
EB  
CE  
E
I
―
―
―
―
―
= −5V, I = 0  
C
EBO  
DC current gain  
h
= −6V, I = −2mA  
120  
―
―
FE (Note)  
C
Collector-emitter saturation voltage  
Transition frequency  
V
I
= −100mA, I = −10mA  
−0.1  
―
CE (sat)  
C
B
f
V
V
= −10V, I = −1mA  
80  
―
MH  
z
T
CE  
C
Collector output capacitance  
C
= −10V, I = 0, f = 1MH  
4
7
pF  
ob  
CB  
E
z
Note: h classification  
FE  
Y(Y): 120 to 240, GR(G): 200 to 400  
( ) marking symbol  
Marking  
Equivalent Circuit (top view)  
Start of commercial production  
1992-01  
1
2014-03-01  
123

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