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HN2C01FE-GR PDF预览

HN2C01FE-GR

更新时间： 2024-02-18 08:42:37
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器光电二极管晶体管
页数 文件大小 规格书
3页 225K
描述
TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2N1A, ES6, 6 PIN, BIP General Purpose Small Signal

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HN2C01FE-GR 技术参数

生命周期：Not Recommended包装说明：2-2N1A, ES6, 6 PIN
针数：6Reach Compliance Code：unknown
风险等级：5.49最大集电极电流 (IC)：0.15 A
集电极-发射极最大电压：50 V配置：SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)：200JESD-30 代码：R-PDSO-F6
JESD-609代码：e0元件数量：2
端子数量：6最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：NPN
认证状态：Not Qualified表面贴装：YES
端子面层：TIN LEAD端子形式：FLAT
端子位置：DUAL晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：60 MHz
Base Number Matches：1

HN2C01FE-GR 数据手册

 浏览型号HN2C01FE-GR的Datasheet PDF文件第2页浏览型号HN2C01FE-GR的Datasheet PDF文件第3页 
HN2C01FE  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
HN2C01FE  
Unit: mm  
Audio Frequency General Purpose Amplifier Applications  
z
z
z
z
Small package (dual type)  
High voltage and high current : V  
= 50V, I = 150mA (max)  
CEO  
C
High h  
: h = 120 to 400  
FE  
FE  
Excellent h linearity : h (I = 0.1mA) / (I = 2mA) = 0.95 (typ.)  
FE  
FE  
C
C
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
60  
50  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
1.EMITTER1  
2.EMITTER2  
3.BASE2  
(E1)  
(E2)  
(B2)  
(C2)  
(B1)  
(C1)  
5
V
I
150  
mA  
mA  
mW  
°C  
°C  
C
4.COLLECTOR2  
5.BASE1  
Base current  
I
30  
B
6.COLLECTOR1  
Collector power dissipation  
Junction temperature  
Storage temperature range  
P *  
C
100  
T
j
150  
T
stg  
−55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
JEDEC  
―
―
JEITA  
TOSHIBA  
Weight: 3mg  
2-2N1A  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
* Total rating  
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 60V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
―
V
V
V
―
―
―
―
―
0.1  
―
2
0.1  
0.1  
400  
0.25  
―
μA  
μA  
―
V
CBO  
CB  
EB  
CE  
E
I
―
―
―
―
―
= 5V, I = 0  
C
EBO  
DC current gain  
h
= 6V, I = 2mA  
120  
―
FE (Note)  
C
Collector-emitter saturation voltage  
Transition frequency  
V
I
= 100mA, I =10mA  
C B  
CE (sat)  
f
V
V
= 10V, I = 1mA  
60  
―
MH  
z
T
CE  
C
Collector output capacitance  
C
= 10V, I = 0, f = 1MH  
E z  
―
pF  
ob  
CB  
Note: h classification Y(Y): 120 to 240, GR(G): 200 to 400 ( ) marking symbol  
FE  
Marking  
Equivalent Circuit (Top View)  
Type Name  
Rank  
h
6
5
4
3
FE  
L1Y  
Start of commercial production  
2000-06  
1
2
2014-03-01  
1
123

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