Datasheet > HMS10N60K

HMS10N60K

更新时间： 2024-11-12 01:19:47

品牌	Logo	应用领域
华之美 - HMSEMI		/
页数	文件大小	规格书
7页	985K
描述
600V N-Channel MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HMS10N60K 数据手册

HMS10N60K/HMS10N60I

600V N-Channel MOSFET

General Description

Features

This Power MOSFET is produced using H&M Semi’s

Advanced Super-Junction technology.

This advanced technology has been especially tailored

to minimize conduction loss, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode.

- 10A, 600V, R_{DS(on) typ.}= 0.42Ω@V_GS= 10 V

- Low gate charge ( typical 35nC)

- High ruggedness

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

These devices are well suited for AC/DC power conversion

in switching mode operation for higher efficiency.

I-PAK

D-PAK

G D S

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

HMS10N60K/HMS10N60I

Units

Drain-Source Voltage

600

V_DSS

Drain Current

- Continuous (T_C= 25℃)

- Continuous (T_C= 100℃)

- Pulsed

I_D

I_DM

(Note 1)

Drain Current

V_GSS

Gate-Source Voltage

±30

(Note 2)

(Note 1)

(Note 3)

EAS

I_AR

Single Pulsed Avalanche Energy

Avalanche Current

120

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (TC = 25℃)

V/ns

dv/dt

4.5

P_D

- Derate above 25℃

0.24

W/℃

T_J, T_STG

Operating and Storage Temperature Range

-55 to +150

℃

Maximum lead temperature for soldering purposes,

T_L

300

℃

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

Parameter

HMS10N60K/HMS10N60I

Units

Thermal Resistance, Junction-to-Case

4.2

℃/W

R_θJC

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

℃/W

R_θJS

R_θJA

12 3 4 5 6 7

中文翻译

下载PDF

与HMS10N60K相关器件

型号	品牌	获取价格	描述	数据表
HMS10-P	LEM	获取价格	Current Transducer
HMS11	ALTECH	获取价格	MS016
HMS1130S02L	MACOM	获取价格	HALF SIZE HIGH PERFORMANCE RELAYS
HMS1130S03P	MACOM	获取价格	HALF SIZE HIGH PERFORMANCE RELAYS
HMS1131S01P	MACOM	获取价格	HALF SIZE HIGH PERFORMANCE RELAYS
HMS1131S03P	MACOM	获取价格	HALF SIZE HIGH PERFORMANCE RELAYS
HMS1131S04P	MACOM	获取价格	HALF SIZE HIGH PERFORMANCE RELAYS
HMS1196S01	MACOM	获取价格	HALF SIZE HIGH PERFORMANCE RELAYS
HMS11N60I	HMSEMI	获取价格	600V N-Channel MOSFET
HMS11N60K	HMSEMI	获取价格	600V N-Channel MOSFET