Datasheet > HMS11N60I

HMS11N60I

更新时间： 2024-11-12 01:19:47

品牌	Logo	应用领域
华之美 - HMSEMI		/
页数	文件大小	规格书
7页	688K
描述
600V N-Channel MOSFET

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HMS11N60I 数据手册

HMS11N60K/HMS11N60I

600V N-Channel MOSFET

General Description

Features

This Power MOSFET is produced using H&M Semi’s

Advanced Super-Junction technology.

This advanced technology has been especially tailored

to minimize conduction loss, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode.

- 11A, 600V, R_{DS(on) typ.}= 0.34Ω@V_GS= 10 V

- Low gate charge ( typical 33nC)

- High ruggedness

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

These devices are well suited for AC/DC power conversion

in switching mode operation for higher efficiency.

I-PAK

D-PAK

G D S

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

HMS11N60K/HMS11N60I

Units

Drain-Source Voltage

600

V_DSS

Drain Current

- Continuous (T_C= 25℃)

- Continuous (T_C= 100℃)

- Pulsed

11*

I_D

6.7 *

I_DM

(Note 1)

Drain Current

30 *

±30

132

2.1

ꢀ

V_GSS

Gate-Source Voltage

(Note 2)

(Note 1)

(Note 3)

EAS

I_AR

Single Pulsed Avalanche Energy

Avalanche Current

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25℃)

V/ns

dv/dt

5.0

125

1.0

ꢀ

P_D

- Derate above 25℃

W/℃

T_J, T_STG

Operating and Storage Temperature Range

-55 to +150

℃

Maximum lead temperature for soldering purposes,

T_L

300

℃

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

Parameter

HMS11N60K/HMS11N60I

Units

Thermal Resistance, Junction-to-Case

0.6

℃/W

R_θJC

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

1.0

℃/W

R_θJS

R_θJA

12 3 4 5 6 7

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