Datasheet > HMS11N70

HMS11N70

更新时间： 2024-11-12 01:02:51

品牌	Logo	应用领域
华之美 - HMSEMI		/
页数	文件大小	规格书
8页	702K
描述
700V N-Channel MOSFET

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数据手册

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HMS11N70 数据手册

HMS11N70K,HMS11N70I,HMS11N70

HMS11N70F,HMS11N70D,HMS11N70B

700V N-Channel MOSFET

Features

-11A, 700V, RDS(on) typ.= 0.4Ω@VGS = 10 V

General Description

Features

This Power MOSFET is produced using H&M Semi’s

Advanced Super-Junction technology.

- Low gate charge ( typical 38nC)

- High ruggedness

- 7.6A, 500V, R_{DS(on) typ.}= 0.5Ω@V_GS= 10 V

This advanced technology has_-b_Loe_we_gn_ate_es_chp_ae_rgc_ei₍a_tyll_py_icata_li₂lo_5nr_Ce₎d

- Fast switching

- High ruggedness

to minimize conduction loss, provide superior switching

- Fast switching

performance, and withstand high energy pulse in the

- 100% avalanche tested

- Improved dv/dt capability

avalanche and commutation mode.

- Improved dv/dt capability

These devices are well suited for AC/DC power conversion

I2-PAK

TO-220

TO-220F

G D S

I-PAK

D-PAK

D2-PAK

D S

Absolute Maximum Ratings

TC = 25°C unless otherwise noted

D2-PAK/D-PAK

I2-PAK / I-PAK/ TO-220

700

Symbol

VDSS

Parameter

TO-220F

Units

Drain-Source Voltage

Drain Current

- Continuous (TC = 25℃)

- Continuous (TC = 100℃)

(Note 1)

6.6

11*

6.6*

30*

IDM

VGSS

EAS

IAR

Drain Current - Pulsed

Gate-Source Voltage

±30

132

Single Pulsed Avalanche Energy

Avalanche Current

(Note 2)

(Note 1)

(Note 3)

EAR

dv/dt

Repetitive Avalanche Energ

Peak Diode Recovery dv/dt

Power Dissipation (TC = 25℃)

V/ns

W/℃

℃

- Derate above 25℃

Operating and Storage Temperature Range

0.67

0.3

TJ, TSTG

-55 to +150

300

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

℃

*Drain current limited by maximum junction temperature.

Thermal Characteristics

Value

Symbol

Parameter

Units

DPAK

1.5

IPAK

TO220

D2PAK

I2PAK

TO220F

RθJC

RθJS

RθJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

1.5

0.5

1.5

0.5

℃/W

0.5

12 3 4 5 6 7 8

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