HMS11N70K,HMS11N70I,HMS11N70
HMS11N70F,HMS11N70D,HMS11N70B
700V N-Channel MOSFET
Features
-11A, 700V, RDS(on) typ.= 0.4Ω@VGS = 10 V
General Description
Features
This Power MOSFET is produced using H&M Semi’s
Advanced Super-Junction technology.
- Low gate charge ( typical 38nC)
- High ruggedness
- 7.6A, 500V, RDS(on) typ. = 0.5Ω@VGS = 10 V
This advanced technology has-bLoewegnatee schpaergcei(atyllpyicatal i2lo5nrCe)d
- Fast switching
- High ruggedness
to minimize conduction loss, provide superior switching
- Fast switching
performance, and withstand high energy pulse in the
- 100% avalanche tested
- 100% avalanche tested
- Improved dv/dt capability
avalanche and commutation mode.
- Improved dv/dt capability
These devices are well suited for AC/DC power conversion
D
D
I2-PAK
TO-220
TO-220F
G D S
G D S
G D S
G
D
D
I-PAK
D-PAK
S
D2-PAK
G
S
G
D S
G
S
Absolute Maximum Ratings
TC = 25°C unless otherwise noted
D2-PAK/D-PAK
I2-PAK / I-PAK/ TO-220
700
Symbol
VDSS
ID
Parameter
TO-220F
Units
Drain-Source Voltage
Drain Current
V
A
- Continuous (TC = 25℃)
- Continuous (TC = 100℃)
(Note 1)
11
6.6
30
11*
6.6*
30*
A
IDM
VGSS
EAS
IAR
Drain Current - Pulsed
Gate-Source Voltage
A
±30
132
21
V
Single Pulsed Avalanche Energy
Avalanche Current
(Note 2)
(Note 1)
(Note 1)
(Note 3)
mJ
A
EAR
dv/dt
Repetitive Avalanche Energ
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25℃)
65
mJ
V/ns
W
50
83
31
PD
W/℃
℃
- Derate above 25℃
Operating and Storage Temperature Range
0.67
0.3
TJ, TSTG
TL
-55 to +150
300
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
℃
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Value
Symbol
Parameter
Units
DPAK
1.5
-
IPAK
TO220
D2PAK
I2PAK
TO220F
RθJC
RθJS
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
1.5
1.5
0.5
62
1.5
1.5
0.5
62
4
-
℃/W
℃/W
℃/W
-
0.5
62
62
62
80