Datasheet > HMS11N70K

HMS11N70K

更新时间： 2024-11-12 01:02:51

品牌	Logo	应用领域
华之美 - HMSEMI		/
页数	文件大小	规格书
8页	702K
描述
700V N-Channel MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HMS11N70K 数据手册

HMS11N70K,HMS11N70I,HMS11N70

HMS11N70F,HMS11N70D,HMS11N70B

700V N-Channel MOSFET

Features

-11A, 700V, RDS(on) typ.= 0.4Ω@VGS = 10 V

General Description

Features

This Power MOSFET is produced using H&M Semi’s

Advanced Super-Junction technology.

- Low gate charge ( typical 38nC)

- High ruggedness

- 7.6A, 500V, R_{DS(on) typ.}= 0.5Ω@V_GS= 10 V

This advanced technology has_-b_Loe_we_gn_ate_es_chp_ae_rgc_ei₍a_tyll_py_icata_li₂lo_5nr_Ce₎d

- Fast switching

- High ruggedness

to minimize conduction loss, provide superior switching

- Fast switching

performance, and withstand high energy pulse in the

- 100% avalanche tested

- Improved dv/dt capability

avalanche and commutation mode.

- Improved dv/dt capability

These devices are well suited for AC/DC power conversion

I2-PAK

TO-220

TO-220F

G D S

I-PAK

D-PAK

D2-PAK

D S

Absolute Maximum Ratings

TC = 25°C unless otherwise noted

D2-PAK/D-PAK

I2-PAK / I-PAK/ TO-220

700

Symbol

VDSS

Parameter

TO-220F

Units

Drain-Source Voltage

Drain Current

- Continuous (TC = 25℃)

- Continuous (TC = 100℃)

(Note 1)

6.6

11*

6.6*

30*

IDM

VGSS

EAS

IAR

Drain Current - Pulsed

Gate-Source Voltage

±30

132

Single Pulsed Avalanche Energy

Avalanche Current

(Note 2)

(Note 1)

(Note 3)

EAR

dv/dt

Repetitive Avalanche Energ

Peak Diode Recovery dv/dt

Power Dissipation (TC = 25℃)

V/ns

W/℃

℃

- Derate above 25℃

Operating and Storage Temperature Range

0.67

0.3

TJ, TSTG

-55 to +150

300

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

℃

*Drain current limited by maximum junction temperature.

Thermal Characteristics

Value

Symbol

Parameter

Units

DPAK

1.5

IPAK

TO220

D2PAK

I2PAK

TO220F

RθJC

RθJS

RθJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

1.5

0.5

1.5

0.5

℃/W

0.5

12 3 4 5 6 7 8

中文翻译

下载PDF

与HMS11N70K相关器件

型号	品牌	获取价格	描述	数据表
HMS1201S108M	MACOM	获取价格	HALF SIZE HIGH PERFORMANCE RELAYS
HMS1201S108P	MACOM	获取价格	HALF SIZE HIGH PERFORMANCE RELAYS
HMS1201S110M	MACOM	获取价格	HALF SIZE HIGH PERFORMANCE RELAYS
HMS1201S110P	MACOM	获取价格	HALF SIZE HIGH PERFORMANCE RELAYS
HMS1201S111M	MACOM	获取价格	HALF SIZE HIGH PERFORMANCE RELAYS
HMS1201S111P	MACOM	获取价格	HALF SIZE HIGH PERFORMANCE RELAYS
HMS1201S118M	MACOM	获取价格	HALF SIZE HIGH PERFORMANCE RELAYS
HMS1201S61	MACOM	获取价格	HALF SIZE HIGH PERFORMANCE RELAYS
HMS-1206	TOKEN	获取价格	德键(HM)非磁性厚膜高阻贴片系列，提供高电阻值和高温应用性能，耐高压、耐高温。
HMS-1210	TOKEN	获取价格	德键(HM)非磁性厚膜高阻贴片系列，提供高电阻值和高温应用性能，耐高压、耐高温。