Datasheet > HMS11N65K

HMS11N65K

更新时间： 2024-11-12 01:19:47

品牌	Logo	应用领域
华之美 - HMSEMI		/
页数	文件大小	规格书
8页	882K
描述
N-Channel Super Junction Power MOSFET â¢

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中文翻译

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HMS11N65K 数据手册

HMS11N65I / HMS11N65K

N-Channel Super Junction Power MOSFET Ⅲ

General Description

The series of devices use advanced trench gate super

junction technology and design to provide excellent R^DS(ON)

with low gate charge. This super junction MOSFET fits the

industry’s AC-DC SMPS requirements for PFC, AC/DC

power conversion, and industrial power applications.

V_DS

650

290

11.5

mΩ

R_DS(ON)TYP

I_D

Features

● New technology for high voltage device

● Low on-resistance and low conduction losses

● Small package

● Ultra Low Gate Charge cause lower driving requirements

● 100% Avalanche Tested

● ROHS compliant

Application

● Power factor correction（PFC）

● Switched mode power supplies(SMPS)

● Uninterruptible Power Supply（UPS）

Schematic diagram

Package Marking And Ordering Information

Device

Device Package

TO-252

Marking

HMS11N65K

HMS11N65I

HMS11N65K

HMS11N65I

TO-251

TO-252

TO-251

Table 1. Absolute Maximum Ratings (T_C=25℃)

Parameter

Symbol

V^DS

Value

650

±30

11.5

Unit

Drain-Source Voltage (V^GS=0V）

Gate-Source Voltage (V^DS=0V) AC (f>1 Hz)

Continuous Drain Current at T_C=25°C

Continuous Drain Current at T_C=100°C

V^GS

I_{D (DC)}

I_{DM (pluse)}

P_D

(Note 1)

Pulsed drain current

Maximum Power Dissipation(T_C=25℃)

101

0.97

144

Derate above 25°C

W/°C

(Note2)

E^AS

I_AR

Single pulse avalanche energy

(Note 1)

Avalanche current

Repetitive Avalanche energy ,t_ARlimited by T_jmax

(Note 1)

0.5

E_AR

12 3 4 5 6 7 8

中文翻译

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