Datasheet > HMC815BLC5TR-R5

HMC815BLC5TR-R5

更新时间： 2024-01-21 20:20:36

品牌	Logo	应用领域
亚德诺 - ADI		射频微波
页数	文件大小	规格书
30页	504K
描述
21 GHz to 27 GHz, GaAs, MMIC, I/Q Upconverter

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HMC815BLC5TR-R5 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Active	针数：	32
Reach Compliance Code：	compliant	风险等级：	5.66
特性阻抗：	50 Ω	构造：	COMPONENT
最大中频频率：	3750 MHz	最小中频频率：
JESD-609代码：	e4	LO 可调谐：	YES
最高工作温度：	85 °C	最低工作温度：	-40 °C
RF输出最大频率：	27000 MHz	RF输出频率-最小值：	21000 MHz
射频/微波设备类型：	UP CONVERTER	端子面层：	Gold (Au) - with Nickel (Ni) barrier
上转换增益-最小值：	7 dB	Base Number Matches：	1

HMC815BLC5TR-R5 数据手册

21 GHz to 27 GHz,

GaAs, MMIC, I/Q Upconverter

Data Sheet

HMC815B

FEATURES

FUNCTIONAL BLOCK DIAGRAM

Conversion gain: 12 dB typical

Sideband rejection: 20 dBc typical

OP1dB compression: 20 dBm typical

OIP3: 27 dBm typical

2× LO to RF isolation: 10 dB typical

2× LO to IF isolation: 15 dB typical

RF return loss: 12 dB typical

LO return loss: 15 dB typical

IF return loss: 15 dB typical

Exposed pad, 4.90 mm × 4.90 mm, 32-terminal, ceramic LCC

NIC

24 NIC

23 NIC

22 NIC

21 VDD2

20 NIC

19 NIC

18 VDD3

17 NIC

NIC

×2

VDD1

NIC

APPLICATIONS

PACKAGE

Point to point and point to multipoint radios

Military radars, electronic warfare, and electronic

intelligence

BASE

GND

NIC = NOT INTERNALLY CONNECTED

Figure 1.

Satellite communications

Sensors

GENERAL DESCRIPTION

The HMC815B is a compact gallium arsenide (GaAs),

The HMC815B is a smaller alternative to hybrid style single

sideband (SSB) downconverter assemblies, and it eliminates the

need for wire bonding by allowing the use of surface-mount

manufacturing techniques.

pseudomorphic high electron mobility transistor (pHEMT),

monolithic microwave integrated circuit (MMIC) upconverter

in a RoHS compliant package that operates from 21 GHz to

27 GHz. This device provides a small signal conversion gain of

12 dB and a sideband rejection of 20 dBc. The HMC815B

utilizes a driver amplifier proceeded by an in phase/quadrature

(I/Q) mixer where the LO is driven by an active 2× multiplier.

IF1 and IF2 mixer inputs are provided, and an external 90°

hybrid is needed to select the required sideband. The I/Q mixer

topology reduces the need for filtering of unwanted sideband.

The HMC815B is available in 4.90 mm × 4.90 mm, 32-terminal

ceramic LCC package and operates over the −40°C to +85°C

temperature range. An evaluation board for the HMC815B is

also available upon request.

Rev. 0

Document Feedback

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rights of third parties that may result from its use. Specificationssubject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks and registered trademarks are the property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700

Technical Support

www.analog.com

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型号	品牌	获取价格	描述	数据表
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HMC816LP4ERTR	ADI	获取价格	IC,RF AMPLIFIER,DUAL,GAAS,LLCC,24PIN,PLASTIC
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HMC817LP4E	HITTITE	获取价格	SMT GaAs PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz
HMC817LP4E_10	HITTITE	获取价格	SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz

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