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HMC8193LC4TR-R5 PDF预览

HMC8193LC4TR-R5

更新时间: 2024-11-25 02:51:39
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亚德诺 - ADI /
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描述
2.5 GHz to 8.5 GHz, I/Q Mixer

HMC8193LC4TR-R5 数据手册

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2.5 GHz to 8.5 GHz, I/Q Mixer  
Data Sheet  
HMC8193  
FEATURES  
FUNCTIONAL BLOCK DIAGRAM  
Passive I/Q mixer  
RF and LO range: 2.5 GHz to 8.5 GHz  
Wide IF range: dc to 4 GHz  
Single-ended RF, LO, and IF  
Conversion loss (downconverter): 9 dB (typical)  
Image rejection (downconverter): 25 dBc (typical)  
SSB noise figure (downconverter): 11.5 dB (typical)  
Input IP3 (downconverter): 20 dBm (typical)  
Input P1dB compression point (downconverter): 13 dBm  
(typical)  
1
2
3
4
5
6
NIC  
NIC  
18 NIC  
17 NIC  
16 GND  
HMC8193  
GND  
RF  
15  
14  
13  
LO  
GND  
NIC  
GND  
NIC  
PACKAGE  
BASE  
Input IP2 (downconverter): 58 dBm (typical)  
RF to IF isolation (downconverter): 22 dB (typical)  
LO to RF isolation (downconverter): 48 dB (typical)  
LO to IF isolation (downconverter): 38 dB (typical)  
Amplitude balance (downconverter): 0.5 dB (typical)  
Phase balance (downconverter): 5° (typical)  
RF return loss: 13 dB (typical)  
GND  
Figure 1.  
LO return loss 13 dB (typical)  
IF return loss: 17 dB (typical)  
Exposed pad, 4 mm × 4 mm, 24-terminal, ceramic  
LCC package  
APPLICATIONS  
Test and measurement instrumentation  
Military, aerospace, and radar  
Direct conversion receivers  
GENERAL DESCRIPTION  
The HMC8193 is a passive, in phase/quadrature (I/Q), monolithic  
microwave integrated circuit (MMIC) mixer that can be used  
either as an image rejection mixer for receiver operations, or as  
a single-sideband upconverter for transmitter operations from  
2.5 GHz to 8.5 GHz. The inherent I/Q architecture of the  
HMC8193 offers excellent image rejection and thereby eliminates  
the need for expensive filtering of unwanted sidebands. The  
mixer also provides excellent local oscillator (LO) to radio  
frequency (RF) and LO to intermediate frequency (IF) isolation  
and reduces the effect of LO leakage to ensure signal integrity.  
Being the HMC8913 is a passive mixer, it does not require any  
dc power sources. The device offers a lower noise figure than an  
active mixer, ensuring superior dynamic range for high  
performance and precision applications.  
The HMC8193 is fabricated on a gallium arsenide (GaAs),  
metal semiconductor field effect transistor (MESFET) process  
and uses Analog Devices, Inc., mixer cells and a 90° hybrid. It is  
available in a compact, 4 mm × 4 mm, 24-lead LCC package  
and operates over the −40°C to +85°C temperature range. An  
evaluation board for this device is also available.  
Rev. B  
Document Feedback  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rightsof third parties that may result fromits use. Specifications subject to change without notice. No  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks andregisteredtrademarks are the property of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700 ©2017–2018 Analog Devices, Inc. All rights reserved.  
Technical Support  
www.analog.com  
 
 
 
 

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