2.5 GHz to 8.5 GHz, I/Q Mixer
Data Sheet
HMC8193
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Passive I/Q mixer
RF and LO range: 2.5 GHz to 8.5 GHz
Wide IF range: dc to 4 GHz
Single-ended RF, LO, and IF
Conversion loss (downconverter): 9 dB (typical)
Image rejection (downconverter): 25 dBc (typical)
SSB noise figure (downconverter): 11.5 dB (typical)
Input IP3 (downconverter): 20 dBm (typical)
Input P1dB compression point (downconverter): 13 dBm
(typical)
1
2
3
4
5
6
NIC
NIC
18 NIC
17 NIC
16 GND
HMC8193
GND
RF
15
14
13
LO
GND
NIC
GND
NIC
PACKAGE
BASE
Input IP2 (downconverter): 58 dBm (typical)
RF to IF isolation (downconverter): 22 dB (typical)
LO to RF isolation (downconverter): 48 dB (typical)
LO to IF isolation (downconverter): 38 dB (typical)
Amplitude balance (downconverter): 0.5 dB (typical)
Phase balance (downconverter): 5° (typical)
RF return loss: 13 dB (typical)
GND
Figure 1.
LO return loss 13 dB (typical)
IF return loss: 17 dB (typical)
Exposed pad, 4 mm × 4 mm, 24-terminal, ceramic
LCC package
APPLICATIONS
Test and measurement instrumentation
Military, aerospace, and radar
Direct conversion receivers
GENERAL DESCRIPTION
The HMC8193 is a passive, in phase/quadrature (I/Q), monolithic
microwave integrated circuit (MMIC) mixer that can be used
either as an image rejection mixer for receiver operations, or as
a single-sideband upconverter for transmitter operations from
2.5 GHz to 8.5 GHz. The inherent I/Q architecture of the
HMC8193 offers excellent image rejection and thereby eliminates
the need for expensive filtering of unwanted sidebands. The
mixer also provides excellent local oscillator (LO) to radio
frequency (RF) and LO to intermediate frequency (IF) isolation
and reduces the effect of LO leakage to ensure signal integrity.
Being the HMC8913 is a passive mixer, it does not require any
dc power sources. The device offers a lower noise figure than an
active mixer, ensuring superior dynamic range for high
performance and precision applications.
The HMC8193 is fabricated on a gallium arsenide (GaAs),
metal semiconductor field effect transistor (MESFET) process
and uses Analog Devices, Inc., mixer cells and a 90° hybrid. It is
available in a compact, 4 mm × 4 mm, 24-lead LCC package
and operates over the −40°C to +85°C temperature range. An
evaluation board for this device is also available.
Rev. B
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