Datasheet > HMC8205BF10

HMC8205BF10

更新时间： 2024-11-24 20:00:15

品牌	Logo	应用领域
亚德诺 - ADI		高功率电源射频微波
页数	文件大小	规格书
14页	295K
描述
0.3 or 0.4 GHz to 6 GHz, 35 W, GaN Power Amplifier

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HMC8205BF10 数据手册

0.3 GHz to 6 GHz, 35 W, GaN

Power Amplifier

Data Sheet

HMC8205BF10

FEATURES

FUNCTIONAL BLOCK DIAGRAM

High P_SAT: 46 dBm

High power gain: 20 dB

High PAE: 38%

Instantaneous bandwidth: 0.3 GHz to 6 GHz

Supply voltage: V_DD= 50 V at 1300 mA

10-lead LDCC package

HMC8205BF10

APPLICATIONS

RFIN

RFOUT

Military jammers

Commercial and military radar

Power amplifier stage for wireless infrastructure

Test and measurement equipment

PACKAGE BASE

GND

Figure 1.

GENERAL DESCRIPTION

The HMC8205BF10 is a gallium nitride (GaN) broadband

power amplifier delivering 45.5 dBm (35 W) with 38% power

added efficiency (PAE) across an instantaneous bandwidth of

0.3 GHz to 6 GHz. No external matching is required to achieve

full band operation. Additionally, no external inductor is

required to bias the amplifier. Also, dc blocking capacitors for

the RFIN and RFOUT pins are integrated into the HMC8205BF10.

The HMC8205BF10 is ideal for pulsed or continuous wave

(CW) applications, such as military jammers, wireless

infrastructure, radar, and general-purpose amplification.

The HMC8205BF10 amplifier is a 10-lead ceramic leaded chip

carrier (LDCC).

Rev. B

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Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rights of third parties that may result from its use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks and registeredtrademarks arethe property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700

Technical Support

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