是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | QFN |
包装说明: | HVQCCN, | 针数: | 40 |
Reach Compliance Code: | compliant | ECCN代码: | 5A991.B |
HTS代码: | 8542.39.00.01 | 风险等级: | 8.47 |
JESD-30 代码: | S-PQCC-N40 | JESD-609代码: | e3 |
长度: | 6 mm | 湿度敏感等级: | 1 |
功能数量: | 1 | 端子数量: | 40 |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | HVQCCN |
封装形状: | SQUARE | 封装形式: | CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
峰值回流温度(摄氏度): | 260 | 认证状态: | Not Qualified |
座面最大高度: | 0.9 mm | 标称供电电压: | 3.3 V |
表面贴装: | YES | 电信集成电路类型: | RF AND BASEBAND CIRCUIT |
温度等级: | INDUSTRIAL | 端子面层: | Matte Tin (Sn) |
端子形式: | NO LEAD | 端子节距: | 0.5 mm |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | 40 |
宽度: | 6 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HMC830LP6GE_1110 | HITTITE |
获取价格 |
FRACTIONAL-N PLL WITH INTEGRATED VCO 25 - 3000 MHz | |
HMC830LP6GE_12 | HITTITE |
获取价格 |
Fractional-N PLL with Integrated VCO | |
HMC830LP6GETR | ADI |
获取价格 |
IC FRACT-N PLL W/VCO 40QFN | |
HMC831LP6CE | HITTITE |
获取价格 |
FRACTIONAL-N SYNTHESIZER WITH INTEGRATED VCO, 1815 - 2010 MHz | |
HMC831LP6CE_10 | HITTITE |
获取价格 |
FRACTIONAL-N SYNTHESIZER WITH INTEGRATED VCO, 1815 - 2010 MHz | |
HMC831LP6CETR | HITTITE |
获取价格 |
Phase Locked Loop | |
HMC8325 | ADI |
获取价格 |
HMC8325 | |
HMC8325-SX | ADI |
获取价格 |
HMC8325-SX | |
HMC8326 | ADI |
获取价格 |
E频段低噪声下变频器SiP 71 - 76 GHz | |
HMC8327 | ADI |
获取价格 |
E频段低噪声下变频器SiP 81 - 86 GHz |