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HMC817LP4ERTR

更新时间： 2024-11-12 20:05:03
品牌 Logo 应用领域
亚德诺 - ADI 放大器
页数 文件大小 规格书
8页 427K
描述
IC,RF AMPLIFIER,DUAL,GAAS,LLCC,24PIN,PLASTIC

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HMC817LP4ERTR 数据手册

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HMC817LP4E  
v00.1108  
SMT GaAs PHEMT DUAL CHANNEL  
LOW NOISE AMPLIFIER, 550 - 1200 MHz  
8
Features  
Noise Figure: 0.5 dB  
Typical Applications  
The HMC817LP4E is ideal for:  
• Cellular/3G and LTE/WiMAX/4G  
• BTS & Infrastructure  
Gain: 16 dB  
Output IP3: +37 dBm  
• Repeaters and Femtocells  
• Multi-Channel Applications  
• Access Points  
Single Supply: +3V to +5V  
50 Ohm Matched Input/Output  
24 Lead 4x4mm QFN Package: 16 mm2  
Functional Diagram  
General Description  
The HMC817LP4E is a GaAs PHEMT Dual Chan-  
nel Low Noise Amplifier that is ideal for Cellular/3G  
and LTE/WiMAX/4G basestation front-end receivers  
operating between 550 and 1200 MHz. The amplifier  
has been optimized to provide 0.5 dB noise figure,  
24 dB gain and +37 dBm output IP3 from a single  
supply of +5V. Input and output return losses are  
excellent with minimal external matching and bias  
decoupling components. The HMC817LP4E shares  
the same package and pinout with the HMC816LP4E  
and HMC818LP4E LNAs. The HMC817LP4E can be  
biased with +3V to +5V and features an externally  
adjustable supply current which allows the designer  
to tailor the linearity performance of each channel of  
the LNA for each application.  
Electrical Specifications, TA = +25° C,  
Rbias 1, 2 = 10k Ohms* Vdd = Vdd1 = Vdd2 = +5V, Idd = Idd1 = Idd2  
Vdd = +3 V  
Vdd = +5 V  
Parameter  
Units  
Min.  
13  
Typ.  
698 - 960  
16  
Max.  
Min.  
11  
Typ.  
550 - 1200  
15  
Max.  
Min.  
13.5  
Typ.  
698 - 960  
16  
Max.  
Min.  
Typ.  
550 - 1200  
16  
Max.  
1.1  
Frequency Range  
MHz  
dB  
Gain  
11.5  
Gain Variation Over Temperature  
Noise Figure  
0.003  
0.5  
0.003  
0.5  
0.005  
0.55  
22  
0.005  
0.6  
dB/ °C  
dB  
0.8  
1.1  
0.85  
Input Return Loss  
Output Return Loss  
28  
22  
17  
dB  
12  
14  
12  
15  
dB  
Output Power for 1 dB  
Compression (P1dB)  
14  
24  
16  
12.5  
24  
16.5  
18.5  
65  
20.5  
16.5  
65  
21  
dBm  
Saturated Output Power (Psat)  
Output Third Order Intercept (IP3)  
Supply Current (Idd)  
17  
31  
34  
17.5  
30  
21  
37  
95  
21.5  
37  
dBm  
dBm  
mA  
44  
34  
44  
124  
95  
124  
* Rbias resistor sets current, see application circuit herein  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
8 - 370  
12345678

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