Datasheet > HMC818LP4E

HMC818LP4E

更新时间： 2024-01-01 04:07:57

品牌	Logo	应用领域
HITTITE		放大器
页数	文件大小	规格书
10页	459K
描述
GaAs SMT PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz

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技术参数
数据手册

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HMC818LP4E 技术参数

生命周期：	Transferred	包装说明：	HVQCCN,
Reach Compliance Code：	unknown	HTS代码：	8542.39.00.01
风险等级：	5.69	JESD-30 代码：	S-PQCC-N24
长度：	4 mm	功能数量：	1
端子数量：	24	最高工作温度：	85 °C
最低工作温度：	-40 °C	封装主体材料：	PLASTIC/EPOXY
封装代码：	HVQCCN	封装形状：	SQUARE
封装形式：	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	座面最大高度：	1 mm
标称供电电压：	3 V	表面贴装：	YES
电信集成电路类型：	RF AND BASEBAND CIRCUIT	温度等级：	INDUSTRIAL
端子形式：	NO LEAD	端子节距：	0.5 mm
端子位置：	QUAD	宽度：	4 mm
Base Number Matches：	1

HMC818LP4E 数据手册

HMC818LP4E

v01.0809

GaAs SMT PHEMT DUAL CHANNEL

LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz

Features

Typical Applications

The HMC818LP4E is ideal for:

• Cellular/3G and LTE/WiMAX/4G

• BTS & Infrastructure

Low Noise Figure: 0.85 dB

High Gain: 20.5 dB

High OIP3: +35 dBm

• Repeaters and Femtocells

• Public Safety Radios

Single Supply: +3V to +5V

50 Ohm Matched Input/Output

24 Lead 4x4mm QFN Package: 16mmꢀ

Functional Diagram

General Description

The HMC818LP4E is a GaAs PHEMT Dual Channel

Low Noise Ampliﬁer that is ideal for Cellular/3G and

LTE/WiMAX/4G basestation front-end receivers

operating between 1.7 - 2.2 GHz. The ampliﬁer has

been optimized to provide 0.85 dB noise ﬁgure,

20.5 dB gain and +35 dBm output IP3 from a single

supply of +5V. Input and output return losses are

excellent and the LNA requires minimal external

matching and bias decoupling components. The

HMC818LP4E can be biased with +3V to +5V and

features an externally adjustable supply current which

allows the designer to tailor the linearity performance

of each channel of the LNA for a speciﬁc application.

Electrical Speciﬁcations,

T_A= +25° C, R_bias= 10K, Vdd= Vdd1, 2, 3, 4, Idd = Idd1 + Idd2, Idd3 + Idd4

Vdd = 3V

Vdd = 5V

Parameter

Units

Min.

Typ.

1700 - 2000

Max.

Min.

Typ.

2000 - 2200

16.5

Max.

Min.

Typ.

1700 - 2000

20.5

Max.

Min.

Typ.

2000 - 2200

15.5 17.5

Max.

Frequency Range

MHz

Gain

Gain Variation Over Temperature

Noise Figure

0.010

0.95

0.008

0.95

0.015

0.85

0.012

0.85

dB/°C

1.2

1.1

Input Return Loss

Output Return Loss

Output Power for 1 dB

Compression (P1dB)

dBm

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Supply Current (Idd)

24.5

21.5

dBm

112

146

112

146

* Rbias resistor sets current, see application circuit herein

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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