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HMC816LP4E

更新时间： 2024-01-09 01:43:24

品牌	Logo	应用领域
HITTITE		射频和微波射频放大器微波放大器
页数	文件大小	规格书
8页	444K
描述
SMT GaAs PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz

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技术参数
数据手册

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HMC816LP4E 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.68	射频/微波设备类型：	WIDE BAND LOW POWER
Base Number Matches：	1

HMC816LP4E 数据手册

HMC816LP4E

v00.1108

SMT GaAs PHEMT DUAL CHANNEL

LOW NOISE AMPLIFIER, 230 - 660 MHz

Features

Low Noise Figure: 0.5 dB

Typical Applications

The HMC816LP4E is ideal for:

• Cellular/3G and LTE/WiMAX/4G

• BTS & Infrastructure

High Gain: 22 dB

High Output IP3: +37 dBm

Single Supply: +3V to +5V

50 Ohm Matched Input/Output

24 Lead 4x4mm QFN Package: 16 mm²

• Repeaters and Femtocells

• Public Safety Radio

• Multi-Channel Applications

Functional Diagram

General Description

The HMC816LP4E is a GaAs PHEMT Dual Channel

Low Noise Ampliﬁer that is ideal for Cellular/3G and

LTE/WiMAX/4G basestation front-end receivers

operating between 230 and 660 MHz. The ampliﬁer

has been optimized to provide 0.5 dB noise ﬁgure,

22 dB gain and +37 dBm output IP3 from a single

supply of +5V. Input and output return losses are

excellent with minimal external matching and bias

decoupling components. The HMC816LP4E shares

the same package and pinout with the HMC817-

LP4E & HMC818LP4E LNAs. The HMC817LP4E can

be biased with +3V to +5V and features an externally

adjustable supply current which allows the designer

to tailor the linearity performance of each channel of

the LNA for each application.

Electrical Speciﬁcations, T_A= +25° C,

Rbias 1, 2 = 10k Ohms*, Vdd = Vdd1, Vdd2 = +5V, Idd = Idd1, Idd2

Vdd = +3V

Vdd = +5V

Max. Min.

Parameter

Units

Min.

Typ.

230 - 450

Max.

Min.

Typ.

450 - 660

Max.

Min.

Typ.

230 - 450

Typ.

450 - 660

Max.

0.9

Frequency Range

Gain

MHz

Gain Variation Over Temperature

Noise Figure

0.001

0.5

0.002

0.5

0.005

0.5

0.007

0.5

dB/ °C

0.9

Input Return Loss

Output Return Loss

Output Power for 1 dB

Compression (P1dB)

dBm

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Supply Current (Idd)

16.5

dBm

126

* Rbias sets current, see application circuit herein

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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