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HMC817LP4E

更新时间： 2024-02-02 19:28:36

品牌	Logo	应用领域
HITTITE		射频和微波射频放大器微波放大器
页数	文件大小	规格书
8页	428K
描述
SMT GaAs PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz

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技术参数
数据手册

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HMC817LP4E 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.84
安装特点：	SURFACE MOUNT	功能数量：	2
端子数量：	24	最高工作温度：	85 °C
最低工作温度：	-40 °C	封装主体材料：	PLASTIC/EPOXY
封装等效代码：	LCC24,.16SQ,20	电源：	3/5 V
子类别：	RF/Microwave Amplifiers	最大压摆率：	124 mA
表面贴装：	YES	技术：	GAAS
Base Number Matches：	1

HMC817LP4E 数据手册

HMC817LP4E

v00.1108

SMT GaAs PHEMT DUAL CHANNEL

LOW NOISE AMPLIFIER, 550 - 1200 MHz

Features

Noise Figure: 0.5 dB

Typical Applications

The HMC817LP4E is ideal for:

• Cellular/3G and LTE/WiMAX/4G

• BTS & Infrastructure

Gain: 16 dB

Output IP3: +37 dBm

• Repeaters and Femtocells

• Multi-Channel Applications

• Access Points

Single Supply: +3V to +5V

50 Ohm Matched Input/Output

24 Lead 4x4mm QFN Package: 16 mm²

Functional Diagram

General Description

The HMC817LP4E is a GaAs PHEMT Dual Chan-

nel Low Noise Ampliﬁer that is ideal for Cellular/3G

and LTE/WiMAX/4G basestation front-end receivers

operating between 550 and 1200 MHz. The ampliﬁer

has been optimized to provide 0.5 dB noise ﬁgure,

24 dB gain and +37 dBm output IP3 from a single

supply of +5V. Input and output return losses are

excellent with minimal external matching and bias

decoupling components. The HMC817LP4E shares

the same package and pinout with the HMC816LP4E

and HMC818LP4E LNAs. The HMC817LP4E can be

biased with +3V to +5V and features an externally

adjustable supply current which allows the designer

to tailor the linearity performance of each channel of

the LNA for each application.

Electrical Speciﬁcations, T_A= +25° C,

Rbias 1, 2 = 10k Ohms* Vdd = Vdd1 = Vdd2 = +5V, Idd = Idd1 = Idd2

Vdd = +3 V

Vdd = +5 V

Parameter

Units

Min.

Typ.

698 - 960

Max.

Min.

Typ.

550 - 1200

Max.

Min.

13.5

Typ.

698 - 960

Max.

Min.

Typ.

550 - 1200

Max.

1.1

Frequency Range

MHz

Gain

11.5

Gain Variation Over Temperature

Noise Figure

0.003

0.5

0.003

0.5

0.005

0.55

0.005

0.6

dB/ °C

0.8

1.1

0.85

Input Return Loss

Output Return Loss

Output Power for 1 dB

Compression (P1dB)

12.5

16.5

18.5

20.5

16.5

dBm

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Supply Current (Idd)

17.5

21.5

dBm

124

* Rbias resistor sets current, see application circuit herein

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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