Datasheet > HMC8120-SX

HMC8120-SX

更新时间： 2024-09-20 20:52:03

品牌	Logo	应用领域
亚德诺 - ADI		射频微波
页数	文件大小	规格书
17页	462K
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HMC8120-SX

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数据手册

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HMC8120-SX 数据手册

71 GHz to 76 GHz,

E-Band Variable Gain Amplifier

Data Sheet

HMC8120

FEATURES

GENERAL DESCRIPTION

Gain: 22 dB typical

The HMC8120 is an integrated E-band, gallium arsenide (GaAs),

pseudomorphic (pHEMT), monolithic microwave integrated

circuit (MMIC), variable gain amplifier and/or driver amplifier

that operates from 71 GHz to 76 GHz. The HMC8120 provides up

to 22 dB of gain, 21 dBm of output P1dB, 30 dBm of OIP3, and

22 dBm of P_SATwhile requiring only 250 mA from a 4 V power

supply. Two gain control voltages (V_CTL1and V_CTL2) are provided

to allow up to 15 dB of variable gain control. The HMC8120

exhibits excellent linearity and is optimized for E-band

communications and high capacity wireless backhaul radio

systems. All data is taken with the chip in a 50 Ω test fixture

connected via a 3 mil wide × 0.5 mil thick × 7 mil long ribbon

on each port.

Wide gain control range: 15 dB typical

Output third-order intercept (OIP3): 30 dBm typical

Output power for 1 dB compression (P1dB): 21 dBm typical

Saturated output power (P_SAT): 22 dBm typical

DC supply: 4 V at 250 mA

No external matching required

Die size: 3.599 mm × 1.369 mm × 0.05 mm

APPLICATIONS

E-band communication systems

High capacity wireless backhaul radio systems

Test and measurement

FUNCTIONAL BLOCK DIAGRAM

HMC8120

RFOUT

1.6kΩ

Figure 1.

Rev. A

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responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rights of third parties that may result from its use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks and registeredtrademarks arethe property of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700

Technical Support

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