Datasheet > HMC814LC3BTR

HMC814LC3BTR

更新时间： 2024-11-12 20:04:47

品牌	Logo	应用领域
HITTITE		射频微波
页数	文件大小	规格书
6页	279K
描述
Frequency Doubler

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

HMC814LC3BTR 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.64	射频/微波设备类型：	FREQUENCY DOUBLER
Base Number Matches：	1

HMC814LC3BTR 数据手册

HMC814LC3B

v02.0614

SMT GaAs MMIC x2 ACTIVE FREQUENCY

MULTIPLIER, 13 - 24.6 GHz OUTPUT

Typical Applications

Features

The HMC814LC3B is ideal for:

High Output Power: +17 dBm

• Clock Generation Applications:

Low Input Power Drive: 0 to +6 dBm

Fo Isolation: >20 dBc @ Fout = 19 GHz

100 kHz SSB Phase Noise: -136 dBc/Hz

Single Supply: +5V @ 88 mA

12 Lead 3x3 mm SMT Package: 9 mm²

SONET OC-192 & SDH STM-64

• Point-to-Point & VSAT Radios

• Test Instrumentation

• Military & Space

• Sensors

Functional Diagram

General Description

The HMC814LC3B is a x2 active broadband frequ-

ency multiplier utilizing GaAs pHEMT technology

in a leadless RoHS compliant SMT package. When

driven by a +4 dBm signal, the multiplier provides

+17 dBm typical output power from 13 to 24.6 GHz.

The Fo, 3Fo and 4Fo isolations are >20 dBc at 19 GHz.

The HMC814LC3B is ideal for use in LO multiplier

chains for Pt-to-Pt & VSAT Radios yielding reduced

parts count vs. traditional approaches. The low ad-

ditive SSB Phase Noise of -136 dBc/Hz at 100 kHz

offset helps maintain good system noise perfor-

mance. The RoHS packaged HMC814LC3B elim-

inates the need for wire bonding, and allows the use of

surface mount manufacturing techniques.

Electrical Speciﬁcations, T_A= +25° C, Vdd1, Vdd2 = +5V, +4 dBm Drive Level

Parameter

Min.

Typ.

6.5 - 12.3

13 - 24.6

Max.

Units

GHz

dBm

dBc

Frequency Range, Input

Frequency Range, Output

Output Power

Fo Isolation (with respect to output level)

3Fo Isolation (with respect to output level)

Input Return Loss

dBc

Output Return Loss

SSB Phase Noise (100 kHz Offset @ Input Frequency = 19 GHz)

Supply Current (Idd1 & Idd2)

-136

dBc/Hz

100

For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824

Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

12 3 4 5 6

中文翻译

下载PDF

HMC814LC3BTR 替代型号

型号	品牌	替代类型	描述	数据表
HMC814LC3B	HITTITE	类似代替	SMT GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 13 - 24.6 GHz OUTPUT

与HMC814LC3BTR相关器件

型号	品牌	获取价格	描述	数据表
HMC815B	ADI	获取价格	21 GHz to 27 GHz, GaAs, MMIC, I/Q Upconverter
HMC815BLC5	ADI	获取价格	21 GHz to 27 GHz, GaAs, MMIC, I/Q Upconverter
HMC815BLC5TR	ADI	获取价格	21 GHz to 27 GHz, GaAs, MMIC, I/Q Upconverter
HMC815BLC5TR-R5	ADI	获取价格	21 GHz to 27 GHz, GaAs, MMIC, I/Q Upconverter
HMC815LC5	HITTITE	获取价格	GaAs MMIC I/Q UPCONVERTER 21 - 27 GHz
HMC815LC5_10	HITTITE	获取价格	GaAs MMIC I/Q UPCONVERTER 21 - 27 GHz
HMC815LC5_1007	HITTITE	获取价格	GaAs MMIC I/Q UPCONVERTER 21 - 27 GHz
HMC815LC5TR	HITTITE	获取价格	暂无描述
HMC816LP4E	HITTITE	获取价格	SMT GaAs PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz
HMC816LP4E_10	HITTITE	获取价格	SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz

与HMC814LC3BTR相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

8
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

9
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

HMC814LC3BTR

HMC814LC3BTR 技术参数

HMC814LC3BTR 数据手册

HMC814LC3BTR 替代型号

与HMC814LC3BTR相关器件

与HMC814LC3BTR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HMC814LC3BTR

HMC814LC3BTR 技术参数

HMC814LC3BTR 数据手册

HMC814LC3BTR 替代型号

与HMC814LC3BTR相关器件

与HMC814LC3BTR相关文章

您还可以找

您在本页遇到什么问题？