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HMC8142 PDF预览

HMC8142

更新时间: 2024-02-11 14:45:36
品牌 Logo 应用领域
亚德诺 - ADI 射频微波
页数 文件大小 规格书
17页 392K
描述
HMC8142

HMC8142 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:DIE OR CHIP
针数:0Reach Compliance Code:compliant
风险等级:5.69特性阻抗:50 Ω
构造:COMPONENT增益:19 dB
安装特点:SURFACE MOUNT功能数量:1
最大工作频率:86000 MHz最小工作频率:81000 MHz
最高工作温度:85 °C最低工作温度:-55 °C
封装等效代码:DIE OR CHIP电源:4 V
射频/微波设备类型:WIDE BAND MEDIUM POWER最大压摆率:450 mA
表面贴装:YES技术:E-PHEMT
Base Number Matches:1

HMC8142 数据手册

 浏览型号HMC8142的Datasheet PDF文件第2页浏览型号HMC8142的Datasheet PDF文件第3页浏览型号HMC8142的Datasheet PDF文件第4页浏览型号HMC8142的Datasheet PDF文件第5页浏览型号HMC8142的Datasheet PDF文件第6页浏览型号HMC8142的Datasheet PDF文件第7页 
81 GHz to 86 GHz, E-Band Power Amplifier  
With Power Detector  
Data Sheet  
HMC8142  
FEATURES  
GENERAL DESCRIPTION  
Gain: 21 dB typical  
The HMC8142 is an integrated E-band gallium arsenide (GaAs),  
Output power for 1 dB compression (P1dB): 25 dBm typical  
Saturated output power (PSAT): 26 dBm typical  
Output third-order intercept (OIP3): 29 dBm typical  
Input return loss: 12 dB typical  
Output return loss: 8 dB typical  
DC supply: 4 V at 450 mA  
pseudomorphic high electron mobility transistor (pHEMT),  
monolithic microwave integrated circuit (MMIC), medium power  
amplifier with a temperature compensated on-chip power detector  
that operates from 81 GHz to 86 GHz. The HMC8142 provides  
21 dB of gain, 25 dBm of output power at 1 dB compression,  
29 dBm of output third-order intercept, and 26 dBm of saturated  
output power at 20% power added efficiency (PAE) from a 4 V  
power supply. The HMC8142 exhibits excellent linearity and is opti-  
mized for E-band communications and high capacity wireless  
backhaul radio systems. The amplifier configuration and high gain  
make it an excellent candidate for last stage signal amplification  
before the antenna. All data is taken with the chip in a 50 Ω test  
fixture connected via a 3 mil wide × 0. 5 mil thick × 7 mil long  
ribbon on each port.  
No external matching required  
Die size: 3.039 mm × 1.999 mm × 0.05 mm  
APPLICATIONS  
E-band communication systems  
High capacity wireless backhaul radio systems  
Test and measurement  
FUNCTIONAL BLOCK DIAGRAM  
4
5
6
7
9
11  
10  
8
V
V
V
DD3  
DD1  
DD2  
V
DD4  
HMC8142  
12  
13  
14  
3
2
RFIN  
RFOUT  
1
V
V
V
V
GG4  
GG1  
GG2  
GG3  
V
V
DET  
REF  
20  
18  
24  
22  
17  
25  
23  
21  
19  
16  
15  
Figure 1.  
Rev. A  
Document Feedback  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks and registeredtrademarks arethe property of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700  
Technical Support  
©2016 Analog Devices, Inc. All rights reserved.  
www.analog.com  
 
 
 
 

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