HMC559
v03.0208
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 20 GHz
Typical Applications
Features
The HMC559 wideband PA is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
P1dB Output Power: +28 dBm
Gain: 14 dB
Output IP3: +36 dBm
3
Supply Voltage: +10V @ 400 mA
50 Ohm Matched Input/Output
Die Size: 3.12 x 1.50 x 0.1 mm
• Test Instrumentation
• Fiber Optics
Functional Diagram
General Description
The HMC559 is a GaAs MMIC PHEMT Distributed
Power Amplifier die which operates between DC and
20 GHz. The amplifier provides 14 dB of gain,
+36 dBm output IP3 and +28 dBm of output power
at 1 dB gain compression while requiring 400 mA
from a +10V supply. Gain flatness is slightly posi-
tive from 4 to 20 GHz making the HMC559 ideal for
EW, ECM and radar driver amplifier applications.
The HMC559 amplifier I/O’s are internally matched to
50 Ohms facilitating integration into Multi-Chip-Mod-
ules (MCMs). All data is taken with the chip connected
via two 0.075mm (3 mil) ribbon bonds of minimal length
0.31mm (12 mils).
Electrical Specifications, TA = +25° C, Vdd= +10V, Vgg2= +4V, Idd= 400 mA*
Parameter
Frequency Range
Min.
Typ.
DC - 6
13
Max.
Min.
Typ.
6 - 12
13.5
0.5
Max.
Min.
Typ.
12 - 20
14
Max.
0.03
Units
GHz
dB
Gain
11
11
11.5
Gain Flatness
0.5
0.01
22
1.5
dB
Gain Variation Over Temperature
Input Return Loss
0.02
0.01
15
0.02
0.02
13
dB/ °C
dB
Output Return Loss
16
16
8
dB
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
25
28
24.5
27.5
29
23
27
dBm
dBm
dBm
dB
30
28.5
33
37
36
4.5
3.5
4.5
Supply Current
(Idd) (Vdd= 10V, Vgg1= -0.8V Typ.)
400
400
400
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 400 mA typical.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
For price, delivery, and to place orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
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