Datasheet > HMC562_08

HMC562_08

更新时间： 2024-11-09 10:53:55

品牌	Logo	应用领域
HITTITE		放大器驱动
页数	文件大小	规格书
8页	285K
描述
GaAs PHEMT MMIC WIDEBAND DRIVER AMPLIFIER, 2 - 35 GHz

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HMC562_08 数据手册

HMC562

v04.1108

GaAs PHEMT MMIC WIDEBAND

DRIVER AMPLIFIER, 2 - 35 GHz

Typical Applications

Features

The HMC562 wideband driver is ideal for:

• Military & Space

P1dB Output Power: +18 dBm

Gain: 12.5 dB

• Test Instrumentation

• Fiber Optics

Output IP3: +27 dBm

Supply Voltage: +8V @ 80 mA

50 Ohm Matched Input/Output

Die Size: 3.12 x 1.42 x 0.1 mm

Functional Diagram

General Description

The HMC562 is a GaAs MMIC PHEMT Distributed

Driver Ampliﬁer die which operates between 2 and

35 GHz. The ampliﬁer provides 12.5 dB of gain,

+19 dBm output IP3 and +12 dBm of output power

at 1 dB gain compression while requiring 80 mA

from a +8V supply. The HMC562 is ideal for EW,

ECM and radar driver ampliﬁer applications. The

HMC562 ampliﬁer I/O’s are DC blocked and internally

matched to 50 Ohms facilitating integration into Multi-

Chip-Modules (MCMs). All data is taken with the chip

connected via two 0.075mm (3 mil) ribbon bonds of

minimal length 0.31mm (12 mils).

Electrical Speciﬁcations, T_A= +25° C, Vdd= +8V, Idd= 80 mA*

Parameter

Frequency Range

Min.

Typ.

2.0 - 15.0

12.5

0.4

Max.

Min.

Typ.

15.0 - 27.0

Max.

Min.

Typ.

Max.

0.03

Units

GHz

27.0 - 35.0

Gain

9.5

8.5

1.3

0.02

Gain Flatness

0.35

0.01

Gain Variation Over Temperature

Input Return Loss

0.01

0.02

dB/ °C

Output Return Loss

Output Power for 1 dB Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Noise Figure

dBm

21.5

3.5

Supply Current

(Idd) (Vdd= 8V, Vgg = -0.8V Typ.)

100

* Adjust Vgg between -2 to 0V to achieve Idd= 80 mA typical.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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