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HMC561LP3E PDF预览

HMC561LP3E

更新时间: 2024-01-02 03:09:05
品牌 Logo 应用领域
HITTITE 射频和微波射频放大器微波放大器输出元件倍频器PC
页数 文件大小 规格书
6页 353K
描述
SMT GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 8 - 21 GHz OUTPUT

HMC561LP3E 技术参数

是否Rohs认证: 符合生命周期:Transferred
Reach Compliance Code:compliant风险等级:5.82
射频/微波设备类型:WIDE BAND LOW POWER

HMC561LP3E 数据手册

 浏览型号HMC561LP3E的Datasheet PDF文件第2页浏览型号HMC561LP3E的Datasheet PDF文件第3页浏览型号HMC561LP3E的Datasheet PDF文件第4页浏览型号HMC561LP3E的Datasheet PDF文件第5页浏览型号HMC561LP3E的Datasheet PDF文件第6页 
HMC561LP3 / 561LP3E  
v00.1206  
SMT GaAs MMIC x2 ACTIVE FREQUENCY  
MULTIPLIER, 8 - 21 GHz OUTPUT  
Typical Applications  
Features  
The HMC561LP3 / HMC561LP3E are suitable for:  
High Output Power: +14 dBm  
• Clock Generation Applications:  
SONET OC-192 & SDH STM-64  
Low Input Power Drive: 0 to +6 dBm  
Fo Isolation: 15 dBc @ Fout= 16 GHz  
100 KHz SSB Phase Noise: -139 dBc/Hz  
RoHS Compliant 3x3 mm SMT Package  
• Point-to-Point & VSAT Radios  
• Test Instrumentation  
• Military & Space  
7
Functional Diagram  
General Description  
The HMC561LP3 & HMC561LP3E are x2 active  
broadband frequency multipliers utilizing GaAs  
PHEMT technology in a leadless RoHS compliant  
SMT package. When driven by a +5 dBm signal, the  
multiplier provides +14 dBm typical output power from  
8 to 21 GHz and the Fo and 3Fo isolations are 15 dBc  
at 16 GHz. The HMC561LP3(E) is ideal for use in LO  
multiplier chains for Pt to Pt & VSAT Radios yielding  
reduced parts count vs. traditional approaches. The  
low additive SSB Phase Noise of -139 dBc/Hz at  
100 kHz offset helps maintain good system noise  
performance. The RoHS packaged HMC561LP3(E)  
eliminates the need for wire bonding, and allows the  
use of surface mount manufacturing techniques.  
Electrical Specifications, TA = +25°C, Vdd = +5V, 5 dBm Drive Level  
Parameter  
Min.  
Typ.  
4 - 10.5  
8 - 21  
14  
Max.  
Units  
GHz  
GHz  
dBm  
dBc  
Frequency Range, Input  
Frequency Range, Output  
Output Power  
11  
Fo Isolation (with respect to output level)  
3Fo Isolation (with respect to output level)  
4Fo Isolation (with respect to output level)  
Input Return Loss  
15  
15  
dBc  
20  
dBc  
16  
dB  
Output Return Loss  
8
dB  
SSB Phase Noise (100 kHz Offset)  
Supply Current (Idd) (Vdd = 5V, Vgg = -1.7V Typ.)  
*Adjust Vgg between -2.0 and -1.2V to achieve Idd = 98 mA  
-139  
98  
dBc/Hz  
mA  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
7 - 82  

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