Datasheet > HMC565LC5RTR

HMC565LC5RTR

更新时间： 2024-01-12 05:01:26

品牌	Logo	应用领域
亚德诺 - ADI		射频微波
页数	文件大小	规格书
6页	220K
描述
HMC565LC5RTR

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技术参数
数据手册

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HMC565LC5RTR 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.17
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	16 dB	最大输入功率 (CW)：
安装特点：	SURFACE MOUNT	功能数量：	1
端子数量：	32	最大工作频率：	20000 MHz
最小工作频率：	6000 MHz	最高工作温度：	85 °C
最低工作温度：	-40 °C	封装等效代码：	LCC32,.2SQ,20
电源：	3 V	射频/微波设备类型：	WIDE BAND LOW POWER
最大压摆率：	75 mA	表面贴装：	YES
技术：	GAAS	Base Number Matches：	1

HMC565LC5RTR 数据手册

HMC565LC5

v02.0209

GaAs SMT PHEMT LOW NOISE

AMPLIFIER, 6 - 20 GHz

Typical Applications

The HMC565LC5 is ideal for use as a LNA or driver

ampliﬁer for:

Features

Noise Figure: 2.5 dB

Gain: 21 dB

• Point-to-Point Radios

OIP3: 20 dBm

• Point-to-Multi-Point Radios & VSAT

• Test Equipment and Sensors

• Military & Space

Single Supply: +3V @ 53 mA

50 Ohm Matched Input/Output

RoHS Compliant 5 x 5 mm Package

Functional Diagram

General Description

The HMC565LC5 is a high dynamic range GaAs

PHEMT MMIC Low Noise Ampliﬁer housed in a

leadless RoHS compliant 5x5mm SMT package.

Operating from 6 to 20 GHz, the HMC565LC5

features 21 dB of small signal gain, 2.5 dB noise

ﬁgure and IP3 of +20 dBm across the operating

band. This self-biased LNA is ideal for microwave

radios due to its single +3V supply operation, and DC

blocked RF I/O’s.

Electrical Speciﬁcations, T_A= +25° C, Vdd 1, 2, 3 = +3V

Parameter

Min.

Typ.

6 - 12

Max.

Min.

Typ.

12 - 20

18.5

0.025

2.5

Max.

Units

GHz

Frequency Range

Gain

Gain Variation Over Temperature

Noise Figure

0.025

2.5

0.035

2.8

0.035

dB/ °C

Input Return Loss

Output Return Loss

Output Power for 1 dB Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Total Supply Current (Idd)(Vdd = +3V)

dBm

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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