HMC515LP5 / 515LP5E
v00.1005
MMIC VCO w/ HALF FREQUENCY OUTPUT
& DIVIDE-BY-4, 11.5 - 12.5 GHz
Typical Applications
Features
Low noise MMIC VCO w/Half Frequency, Divide-by-4
Outputs for:
Dual Output: Fo = 11.5 - 12.5 GHz
Fo/2 = 5.75 - 6.25 GHz
• VSAT Radio
Pout: +10 dBm
• Point to Point/Multipoint Radio
• Test Equipment & Industrial Controls
• Military End-Use
Phase Noise: -110 dBc/Hz @100 kHz Typ.
No External Resonator Needed
QFN Leadless SMT Package, 25 mm2
Functional Diagram
General Description
9
The HMC515LP5 & HMC515LP5E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC VCOs.
The HMC515LP5 & HMC515LP5E integrate resona-
tors, negative resistance devices, varactor diodes
and feature half frequency and divide-by-4 outputs.
The VCO’s phase noise performance is excellent over
temperature, shock, and process due to the oscillator’s
monolithic structure. Power output is +10 dBm typical
from a +5V supply voltage. The prescaler function can
be disabled to conserve current if not required. The
voltage controlled oscillator is packaged in a leadless
QFN 5x5 mm surface mount package, and requires no
external matching components.
Electrical Specifications, TA = +25° C, Vcc1, Vcc2 = +5V
Parameter
Min.
Typ.
Max.
Units
Fo
Fo/2
11.5 - 12.5
5.75 - 6.25
GHz
GHz
Frequency Range
RFOUT
RFOUT/2
RFOUT/4
+6
+3
-9
+15
+9
-3
dBm
dBm
dBm
Power Output
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RFOUT
Tune Voltage
-110
200
2
dBc/Hz
V
Vtune
2
13
240
10
Supply Current
Icc1 & Icc2
160
mA
μA
Tune Port Leakage Current (Vtune= 13V)
Output Return Loss
dB
Harmonics/Subharmonics
1/2
3/2
2nd
3rd
30
35
24
40
dBc
dBc
dBc
dBc
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= 5V
Frequency Drift Rate
8
6
MHz pp
MHz/V
MHz/°C
1.2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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