Datasheet > HMC515LP5TR

HMC515LP5TR

更新时间： 2024-01-17 23:47:10

品牌	Logo	应用领域
亚德诺 - ADI		振荡器
页数	文件大小	规格书
6页	375K
描述
VCO, 11500MHz - 12500MHz, PLASTIC, LEADLESS, QFN-32

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技术参数
数据手册

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HMC515LP5TR 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Transferred	Reach Compliance Code：	compliant
风险等级：	5.65	其他特性：	TAPE AND REEL
最大控制电压：	13 V	最小控制电压：	2 V
JESD-609代码：	e0	安装特点：	SURFACE MOUNT
偏移频率：	100 kHz	最大工作频率：	12500 MHz
最小工作频率：	11500 MHz	最高工作温度：	85 °C
最低工作温度：	-40 °C	振荡器类型：	VOLTAGE CONTROLLED OSCILLATOR
输出功率：	6 dBm	相位噪声：	-110 dBc/Hz
物理尺寸：	5.1mm x 5.1mm x 1.0mm	最大压摆率：	240 mA
最大供电电压：	5.25 V	最小供电电压：	4.75 V
标称供电电压：	5 V	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

HMC515LP5TR 数据手册

HMC515LP5 / 515LP5E

v03.0811

MMIC VCO w/ HALF FREQUENCY OUTPUT

& DIVIDE-BY-4, 11.5 - 12.5 GHz

Typical Applications

Features

Low noise MMIC VCO w/Half Frequency, Divide-by-4

Outputs for:

Dual Output: Fo = 11.5 - 12.5 GHz

Fo/2 = 5.75 - 6.25 GHz

• VSAT Radio

Pout: +10 dBm

• Point to Point/Multipoint Radio

• Test Equipment & Industrial Controls

• Military End-Use

Phase Noise: -110 dBc/Hz @100 kHz Typ.

No External Resonator Needed

32 Lead 5x5mm SMT Package: 25mm²

Functional Diagram

General Description

The HMC515LP5 & HMC515LP5E are GaAs InGaP

Heterojunction Bipolar Transistor (HBT) MMIC VCOs.

The HMC515LP5 & HMC515LP5E integrate resona-

tors, negative resistance devices, varactor diodes

and feature half frequency and divide-by-4 outputs.

The VCO’s phase noise performance is excellent over

temperature, shock, and process due to the oscillator’s

monolithic structure. Power output is +10 dBm typical

from a +5V supply voltage. The prescaler function can

be disabled to conserve current if not required. The

voltage controlled oscillator is packaged in a leadless

QFN 5x5 mm surface mount package, and requires no

external matching components.

Electrical Speciﬁcations, T_A= +25° C, Vcc1, Vcc2 = +5V

Parameter

Min.

Typ.

Max.

Units

Fo/2

11.5 - 12.5

5.75 - 6.25

GHz

Frequency Range

RFOUT

RFOUT/2

RFOUT/4

-9

+15

-3

dBm

Power Output

SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RFOUT

Tune Voltage

-110

200

dBc/Hz

Vtune

240

Supply Current

Icc1 & Icc2

160

µA

Tune Port Leakage Current (Vtune= 13V)

Output Return Loss

Harmonics/Subharmonics

1/2

3/2

2nd

3rd

dBc

Pulling (into a 2.0:1 VSWR)

Pushing @ Vtune= 5V

Frequency Drift Rate

MHz pp

MHz/V

MHz/°C

1.2

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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