HMC517LC4TR

更新时间： 2024-01-29 22:10:38

品牌	Logo	应用领域
HITTITE		射频和微波射频放大器微波放大器
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6页	223K
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HMC517LC4TR 数据手册

HMC517LC4

v02.1208

SMT PHEMT LOW NOISE

AMPLIFIER, 17 - 26 GHz

Features

Typical Applications

The HMC517LC4 is ideal for use as a LNA or driver

ampliﬁer for:

Noise Figure: 2.5 dB

Gain: 19 dB

• Point-to-Point Radios

• Point-to-Multi-Point Radios & VSAT

• Test Equipment and Sensors

• Military

OIP3: +23 dBm

Single Supply: +3V @ 67 mA

50 Ohm Matched Input/Output

RoHS Compliant 4 x 4 mm Package

Functional Diagram

General Description

The HMC517LC4 chip is a high dynamic range GaAs

PHEMT MMIC Low Noise Ampliﬁer (LNA) housed in

a leadless “Pb free” RoHS compliant SMT package.

The HMC517LC4 provides 19 dB of small signal gain,

2.5 dB of noise ﬁgure and has an output IP3 of

+23 dBm. The P1dB output power of +13 dBm enables

the LNA to also function as a LO driver for balanced,

I/Q or image reject mixers. The HMC517LC4 allows

the use of surface mount manufacturing techniques.

Electrical Speciﬁcations, T_A= +25° C, Vdd 1, 2, 3 = +3V

Parameter

Min.

Typ.

17 - 22

Max.

Min.

Typ.

22 - 26

Max.

Units

GHz

Frequency Range

Gain

Gain Variation Over Temperature

Noise Figure

0.02

2.5

0.03

3.1

0.02

2.6

0.03

3.3

dB/ °C

Input Return Loss

Output Return Loss

Output Power for 1 dB Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Supply Current (Idd)(Vdd = +3V)

dBm

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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