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HMC518 PDF预览

HMC518

更新时间: 2024-02-28 00:12:00
品牌 Logo 应用领域
HITTITE 放大器射频微波
页数 文件大小 规格书
6页 322K
描述
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 20 - 32 GHz

HMC518 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:TransferredReach Compliance Code:compliant
ECCN代码:3A001.B.2.D风险等级:5.82
其他特性:LOW NOISE特性阻抗:50 Ω
构造:COMPONENT增益:10 dB
最大输入功率 (CW):7 dBmJESD-609代码:e4
最大工作频率:32000 MHz最小工作频率:20000 MHz
最高工作温度:85 °C最低工作温度:-55 °C
射频/微波设备类型:WIDE BAND LOW POWER端子面层:Gold (Au)

HMC518 数据手册

 浏览型号HMC518的Datasheet PDF文件第2页浏览型号HMC518的Datasheet PDF文件第3页浏览型号HMC518的Datasheet PDF文件第4页浏览型号HMC518的Datasheet PDF文件第5页浏览型号HMC518的Datasheet PDF文件第6页 
HMC518  
v00.0904  
GaAs PHEMT MMIC LOW NOISE  
AMPLIFIER, 20 - 32 GHz  
1
Typical Applications  
Features  
The HMC518 is ideal for use as a LNA or driver ampli-  
fi e r f o r :  
Noise Figure: 3.0 dB  
Gain: 15 dB  
• Point-to-Point Radios  
OIP3: 23 dBm  
• Point-to-Multi-Point Radios & VSAT  
• Test Equipment and Sensors  
• Military & Space  
Single Supply: +3V @ 65 mA  
50 Ohm Matched Input/Output  
General Description  
Functional Diagram  
The HMC518 chip is a high dynamic range GaAs  
PHEMT MMIC Low Noise Amplifier (LNA) which  
covers the 20 to 32 GHhz frequency range. The  
HMC518 provides 15 dB of small signal gain, 3.0 dB  
of noise figure and has an output IP3 greater than  
23 dBm. The chip can easily be integrated into hy-  
brid or MCM assemblies due to its small size. All data  
is tested with the chip in a 50 Ohm test fixture con-  
nected via 0.075mm (3 mil) ribbon bonds of minimal  
length 0.31 mm (12 mil). Two 0.025 mm (1 mil) diameter  
bondwires may also be used to make the RFIN and  
RFOUT connections.  
Electrical Specifications, TA = +25° C, Vdd 1, 2, 3 = +3V  
Parameter  
Min.  
Typ.  
20 - 28  
15  
Max.  
Min.  
10  
Typ.  
28 - 32  
13  
Max.  
Units  
GHz  
dB  
Frequency Range  
Gain  
12  
Gain Variation Over Temperature  
Noise Figure  
0.015  
3.0  
0.025  
4.0  
0.015  
3.5  
0.025  
5.5  
dB/ °C  
dB  
Input Return Loss  
13  
10  
dB  
Output Return Loss  
15  
10  
dB  
Output Power for 1 dB Compression (P1dB)  
Saturated Output Power (Psat)  
Output Third Order Intercept (IP3)  
Supply Current (Idd)(Vdd = +3V)  
9
12  
9
12  
dBm  
dBm  
dBm  
mA  
14  
16  
23  
25  
65  
65  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
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