Datasheet > HMC519_09

HMC519_09

更新时间： 2022-11-07 16:54:53

品牌	Logo	应用领域
HITTITE		放大器
页数	文件大小	规格书
6页	256K
描述
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 18 - 32 GHz

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HMC519_09 数据手册

HMC519

v01.0907

GaAs PHEMT MMIC LOW NOISE

AMPLIFIER, 18 - 32 GHz

Typical Applications

Features

The HMC519 is ideal for use as either a LNA or driver

ampliﬁer for:

Noise Figure: 2.8 dB

Gain: 15 dB

• Point-to-Point Radios

OIP3: 23 dBm

• Point-to-Multi-Point Radios & VSAT

• Test Equipment & Sensors

• Military & Space

Single Supply: +3V @ 65 mA

50 Ohm Matched Input/Output

Die Size: 2.27 x 1.32 x 0.1 mm

Functional Diagram

General Description

The HMC519 chip is a high dynamic range GaAs

PHEMT MMIC Low Noise Ampliﬁer (LNA) which

covers the 18 to 32 GHz frequency range. The

HMC519 provides 15 dB of small signal gain, 2.8 dB

of noise ﬁgure and has an output IP3 greater than

23 dBm. The chip can easily be integrated into hy-

brid or MCM assemblies due to its small size. All data

is tested with the chip in a 50 Ohm test ﬁxture con-

nected via 0.075 mm (3 mil) ribbon bonds of minimal

length 0.31 mm (12 mil). Two 0.025 mm (1 mil) diameter

bondwires may also be used to make the RFIN and

RFOUT connections.

Electrical Speciﬁcations, T_A= +25° C, Vdd 1, 2, 3 = +3V

Parameter

Min.

Typ.

18 - 28

Max.

Min.

Typ.

28 - 32

Max.

Units

GHz

Frequency Range

Gain

Gain Variation Over Temperature

Noise Figure

0.015

2.8

0.025

3.5

0.015

3.5

0.025

4.5

dB/ °C

Input Return Loss

Output Return Loss

Output Power for 1 dB Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Supply Current (Idd)(Vdd = +3V)

dBm

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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