Datasheet > HMC516_09

HMC516_09

更新时间： 2022-11-07 16:54:29

品牌	Logo	应用领域
HITTITE		放大器
页数	文件大小	规格书
6页	250K
描述
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 7 - 17 GHz

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HMC516_09 数据手册

HMC516

v02.0907

GaAs PHEMT MMIC LOW NOISE

AMPLIFIER, 7 - 17 GHz

Typical Applications

Features

The HMC516 is ideal for use as a LNA or driver ampli-

ﬁ e r f o r :

Noise Figure: 1.8 dB

Gain: 20 dB

• Point-to-Point Radios

OIP3: +20 dBm

• Point-to-Multi-Point Radios & VSAT

• Test Equipment and Sensors

• Military & Space

Single Supply: 3V @ 65 mA

50 Ohm Matched Input/Output

Die Size: 2.52 x 1.32 x 0.1 mm

Functional Diagram

General Description

The HMC516 chip is a high dynamic range GaAs

PHEMT MMIC Low Noise Ampliﬁer (LNA) which

covers the 7 to 17 GHz frequency range. The HMC516

provides 20 dB of small signal gain, 1.8 dB of noise

ﬁgure and has an output IP3 greater than +20 dBm.

The chip can easily be integrated into hybrid or MCM

assemblies due to its small size. All data is tested

with the chip in a 50 Ohm test ﬁxture connected via

0.075mm (3 mil) ribbon bonds of minimal length 0.31

mm (12 mil). Two 0.025 mm (1 mil) diameter bondwires

may also be used to make the RFIN and RFOUT

connections.

Electrical Speciﬁcations, T_A= +25° C, Vdd 1, 2, 3 = +3V

Parameter

Min.

Typ.

7 - 9

19.5

0.02

2.5

Max.

Min.

Typ.

9 - 12

20.5

0.02

2.0

Max.

Min.

Typ.

12 - 17

20.5

0.02

1.8

Max.

Units

GHz

Frequency Range

Gain

Gain Variation Over Temperature

Noise Figure

0.03

3.3

0.03

2.6

0.03

2.3

dB/ °C

Input Return Loss

Output Return Loss

Output Power for 1 dB Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Supply Current (Idd)(Vdd = +3V)

dBm

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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