TM
HM-65162/883
2K x 8 Asynchronous
CMOS Static RAM
March 1997
Features
Description
• This Circuit is Processed in Accordance to MIL-STD-
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
The HM-65162/883 is a CMOS 2048 x 8 Static Random
Access Memory manufactured using the Intersil Advanced
SAJI V process. The device utilizes asynchronous circuit
design for fast cycle time and ease of use. The pinout is the
JEDEC 24 pin DIP, and 32 pad 8-bit wide standard which
allows easy memory board layouts flexible to accommodate
• Fast Access Time . . . . . . . . . . . . . . . . . . . 70/90ns Max
• Low Standby Current. . . . . . . . . . . . . . . . . . . .50µA Max
• Low Operating Current . . . . . . . . . . . . . . . . . 70mA Max a variety of industry standard PROMs, RAMs, ROMs and
EPROMs. The HM-65162/883 is ideally suited for use in
microprocessor based systems with its 8-bit word length
organization. The convenient output enable also simplifies
• Data Retention at 2.0V. . . . . . . . . . . . . . . . . . .20µA Max
• TTL Compatible Inputs and Outputs
the bus interface by allowing the data outputs to be con-
trolled independent of the chip enable. Gated inputs lower
operating current and also eliminate the need for pull-up or
pull-down resistors.
• JEDEC Approved Pinout (2716, 6116 Type)
• No Clocks or Strobes Required
o
o
• Wide Temperature Range . . . . . . . . . . -55 C to +125 C
• Equal Cycle and Access Time
• Single 5V Supply
• Gated Inputs
- No Pull-Up or Pull-Down Resistors Required
Ordering Information
70ns/20µA
HM1-65162B/883
HM4-65162B/883
90ns/40µA
HM1-65162/883
HM4-65162/883
90ns/300µA
TEMP. RANGE
PACKAGE
CERDIP
CLCC
PKG. NO.
o
o
HM1-65162C/883
-
-55 C to 125 C
F24.6
J32.A
o
o
-55 C to 125 C
Pinouts
HM-65162/883 (CERDIP)
HM-65162/883 (CLCC)
TOP VIEW
TOP VIEW
PIN
DESCRIPTION
No Connect
A7
A6
1
2
3
4
5
6
7
8
9
24
23
22
21
20
19
18
17
16
15
14
13
VCC
A8
1
4
3
2
32 31 30
NC
29
28
27
26
25
24
23
22
21
5
6
A8
A9
NC
A6
A5
A5
A9
A0 - A10
E
Address Input
A4
W
7
8
A4
A3
Chip Enable/Power Down
Ground
A3
G
W
G
VSS/GND
A2
A10
E
9
A2
A1
DQ0 - DQ7 Data In/Data Out
10
11
12
13
A1
A10
E
A0
DQ7
DQ6
DQ5
DQ4
DQ3
VCC
W
Power (+5V)
Write Enable
Output Enable
DQ0
A0
DQ1 10
DQ2
NC
DQ0
DQ7
DQ6
11
GND 12
G
14
15 16 17 18 19 20
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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FN3001.1
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