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HGTD2N120BNS PDF预览

HGTD2N120BNS

更新时间： 2024-01-21 01:50:09
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管功率控制瞄准线双极性晶体管
页数 文件大小 规格书
7页 88K
描述
12A, 1200V, NPT Series N-Channel IGBT

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中文翻译

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HGTD2N120BNS 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：unknown风险等级：5.64
其他特性：LOW CONDUCTION LOSS最大集电极电流 (IC)：2 A
集电极-发射极最大电压：1200 V配置：SINGLE
JEDEC-95代码：TO-252AAJESD-30 代码：R-PSSO-G2
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：SINGLE
晶体管应用：POWER CONTROL晶体管元件材料：SILICON
Base Number Matches：1

HGTD2N120BNS 数据手册

 浏览型号HGTD2N120BNS的Datasheet PDF文件第2页浏览型号HGTD2N120BNS的Datasheet PDF文件第3页浏览型号HGTD2N120BNS的Datasheet PDF文件第4页浏览型号HGTD2N120BNS的Datasheet PDF文件第5页浏览型号HGTD2N120BNS的Datasheet PDF文件第6页浏览型号HGTD2N120BNS的Datasheet PDF文件第7页 
HGTP2N120BN, HGTD2N120BNS,  
HGT1S2N120BNS  
Data Sheet  
January 2000  
File Number 4696.2  
12A, 1200V, NPT Series N-Channel IGBT  
Features  
o
The HGTP2N120BN, HGTD2N120BNS, and  
• 12A, 1200V, T = 25 C  
C
HGT1S2N120BNS are Non-Punch Through (NPT) IGBT  
designs. They are new members of the MOS gated high  
voltage switching IGBT family. IGBTs combine the best  
features of MOSFETs and bipolar transistors. This device  
has the high input impedance of a MOSFET and the low  
on-state conduction loss of a bipolar transistor.  
• 1200V Switching SOA Capability  
o
• Typical Fall Time. . . . . . . . . . . . . . . . 160ns at T = 150 C  
J
• Short Circuit Rating  
• Low Conduction Loss  
• Avalanche Rated  
The IGBT is ideal for many high voltage switching  
applications operating at moderate frequencies where low  
conduction losses are essential, such as: AC and DC motor  
controls, power supplies and drivers for solenoids, relays  
and contactors.  
• Thermal Impedance SPICE Model  
Temperature Compensating SABER™ Model  
www.intersil.com  
• Related Literature  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Formerly Developmental Type TA49312.  
Ordering Information  
Packaging  
PART NUMBER  
PACKAGE  
BRAND  
2N120BN  
JEDEC TO-220AB  
HGTP2N120BN  
TO-220AB  
E
C
HGTD2N120BNS  
HGT1S2N120BNS  
TO-252AA  
TO-263AB  
2N120BN  
2N120BN  
COLLECTOR  
(FLANGE)  
G
NOTE: When ordering, use the entire part number. Add the suffix 9A  
to obtain the TO-263AB and TO-252AA variant in Tape and Reel,  
e.g., HGT1S2N120BNS9A.  
Symbol  
C
JEDEC TO-252AA  
COLLECTOR  
(FLANGE)  
G
G
E
E
JEDEC TO-263AB  
COLLECTOR  
(FLANGE)  
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS  
4,364,073  
4,598,461  
4,682,195  
4,803,533  
4,888,627  
4,417,385  
4,605,948  
4,684,413  
4,809,045  
4,890,143  
4,430,792  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,443,931  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,466,176  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,516,143  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
4,532,534  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,587,713  
4,644,637  
4,801,986  
4,883,767  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000  
SABER™ is a trademark of Analogy, Inc.  
1
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