是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | not_compliant |
风险等级: | 5.07 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 13 A | 集电极-发射极最大电压: | 1200 V |
配置: | SINGLE | 最大降落时间(tf): | 320 ns |
门极-发射极最大电压: | 20 V | JEDEC-95代码: | TO-252AA |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 104 W |
认证状态: | Not Qualified | 最大上升时间(tr): | 15 ns |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | MOTOR CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 585 ns |
标称接通时间 (ton): | 32 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HGTD3N60A4 | FAIRCHILD |
获取价格 |
600V, SMPS Series N-Channel IGBT | |
HGTD3N60A4S | FAIRCHILD |
获取价格 |
600V, SMPS Series N-Channel IGBT | |
HGTD3N60A4S | INTERSIL |
获取价格 |
600V, SMPS Series N-Channel IGBT | |
HGTD3N60A4S | ROCHESTER |
获取价格 |
17A, 600V, N-CHANNEL IGBT, TO-252AA, TO-252AA, 3 PIN | |
HGTD3N60A4S9A | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-252AA | |
HGTD3N60B3 | ROCHESTER |
获取价格 |
7A, 600V, N-CHANNEL IGBT, PLASTIC PACKAGE-3 | |
HGTD3N60B3S | INTERSIL |
获取价格 |
7A, 600V, UFS Series N-Channel IGBTs | |
HGTD3N60B3S | ROCHESTER |
获取价格 |
7A, 600V, N-CHANNEL IGBT, PLASTIC PACKAGE-4 | |
HGTD3N60B3S9A | ROCHESTER |
获取价格 |
7A, 600V, N-CHANNEL IGBT, PLASTIC PACKAGE-4 | |
HGTD3N60B3S9A | RENESAS |
获取价格 |
7A, 600V, N-CHANNEL IGBT, TO-252AA |