Datasheet > HGTD3N60A4S9A

HGTD3N60A4S9A

更新时间： 2024-02-29 23:48:20

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		局域网栅瞄准线功率控制晶体管
页数	文件大小	规格书
7页	107K
描述
Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-252AA

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技术参数
数据手册

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HGTD3N60A4S9A 技术参数

生命周期：	Transferred	包装说明：	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：	unknown	风险等级：	5.12
其他特性：	LOW CONDUCTION LOSS	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	17 A	集电极-发射极最大电压：	600 V
配置：	SINGLE	JEDEC-95代码：	TO-252AA
JESD-30 代码：	R-PSSO-G2	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	SINGLE	晶体管应用：	MOTOR CONTROL
晶体管元件材料：	SILICON	标称断开时间 (toff)：	180 ns
标称接通时间 (ton)：	17.5 ns	Base Number Matches：	1

HGTD3N60A4S9A 数据手册

HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4

Data Sheet

January 2000

File Number 4825

600V, SMPS Series N-Channel IGBT

Features

The HGTD3N60A4S, HGT1S3N60A4S and the

• >100kHz Operation at 390V, 3A

• 200kHz Operation at 390V, 2.5A

• 600V Switching SOA Capability

HGTP3N60A4 are MOS gated high voltage switching

devices combining the best features of MOSFETs and

bipolar transistors. These devices have the high input

impedance of a MOSFET and the low on-state conduction

loss of a bipolar transistor. The much lower on-state voltage

• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T = 125 C

• 12mJ E Capability

drop varies only moderately between 25 C and 150 C.

• Low Conduction Loss

This IGBT is ideal for many high voltage switching

applications operating at high frequencies where low

conduction losses are essential. This device has been

optimized for high frequency switch mode power

supplies.

• Temperature Compensating SABER™ Model

www.Fairchild.com

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly Developmental Type TA49327.

Packaging

Ordering Information

JEDEC TO-252AA

PART NUMBER

HGTD3N60A4S

HGT1S3N60A4S

HGTP3N60A4

PACKAGE

BRAND

3N60A4

TO-252AA

COLLECTOR

(FLANGE)

TO-263AB

TO-220AB

3N60A4

NOTE: When ordering, use the entire part number. Add the suffix 9A

to obtain the TO-252AA or the TO-263AB in tape and reel, i.e.

HGT1S3N60A4S9A

JEDEC TO-263AB

Symbol

COLLECTOR

(FLANGE)

JEDEC TO-220AB

COLLECTOR

(FLANGE)

Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 Rev. B

12 3 4 5 6 7

中文翻译

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与HGTD3N60A4S9A相关器件

型号	品牌	获取价格	描述	数据表
HGTD3N60B3	ROCHESTER	获取价格	7A, 600V, N-CHANNEL IGBT, PLASTIC PACKAGE-3
HGTD3N60B3S	INTERSIL	获取价格	7A, 600V, UFS Series N-Channel IGBTs
HGTD3N60B3S	ROCHESTER	获取价格	7A, 600V, N-CHANNEL IGBT, PLASTIC PACKAGE-4
HGTD3N60B3S9A	ROCHESTER	获取价格	7A, 600V, N-CHANNEL IGBT, PLASTIC PACKAGE-4
HGTD3N60B3S9A	RENESAS	获取价格	7A, 600V, N-CHANNEL IGBT, TO-252AA
HGTD3N60C3	HARRIS	获取价格	6A, 600V, UFS Series N-Channel IGBTs
HGTD3N60C3S	FAIRCHILD	获取价格	6A, 600V, UFS Series N-Channel IGBTs
HGTD3N60C3S	INTERSIL	获取价格	6A, 600V, UFS Series N-Channel IGBTs
HGTD3N60C3S	HARRIS	获取价格	6A, 600V, UFS Series N-Channel IGBTs
HGTD3N60C3S9A	FAIRCHILD	获取价格	6A, 600V, UFS Series N-Channel IGBTs

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