Datasheet > HGTD3N60C3S

HGTD3N60C3S

更新时间： 2024-10-01 22:29:07

品牌	Logo	应用领域
哈里斯 - HARRIS		晶体晶体管电动机控制瞄准线双极性晶体管栅
页数	文件大小	规格书
9页	231K
描述
6A, 600V, UFS Series N-Channel IGBTs

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技术参数
数据手册

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HGTD3N60C3S 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	SMALL OUTLINE, R-PSSO-G2	Reach Compliance Code：	unknown
风险等级：	5.6	其他特性：	LOW CONDUCTION LOSS
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	6 A
集电极-发射极最大电压：	600 V	配置：	SINGLE
最大降落时间（tf）：	275 ns	门极发射器阈值电压最大值：	6 V
门极-发射极最大电压：	20 V	JEDEC-95代码：	TO-252AA
JESD-30 代码：	R-PSSO-G2	JESD-609代码：	e0
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	33 W
认证状态：	Not Qualified	子类别：	Insulated Gate BIP Transistors
表面贴装：	YES	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING	端子位置：	SINGLE
晶体管应用：	MOTOR CONTROL	晶体管元件材料：	SILICON
标称断开时间 (toff)：	455 ns	标称接通时间 (ton)：	15 ns
Base Number Matches：	1

HGTD3N60C3S 数据手册

HGTD3N60C3,

HGTD3N60C3S

S E M I C O N D U C T O R

June 1997

6A, 600V, UFS Series N-Channel IGBTs

Features

Description

• 6A, 600V at T = 25 C

The HGTD3N60C3 and HGTD3N60C3S are MOS gated high

voltage switching devices combining the best features of

MOSFETs and bipolar transistors. These devices have the

high input impedance of a MOSFET and the low on-state con-

duction loss of a bipolar transistor. The much lower on-state

• 600V Switching SOA Capability

• Typical Fall Time . . . . . . . . . . . . . . 130ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

voltage drop varies only moderately between 25 C and

150 C.

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

Ordering Information

PART NUMBER

PACKAGE

TO-251AA

TO-252AA

BRAND

G3N60C

HGTD3N60C3

Formerly developmental type TA49113.

HGTD3N60C3S

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-252AA variant in Tape and Reel, i.e.

HGTD3N60C3S9A.

Symbol

N-CHANNEL ENHANCEMENT MODE

Packaging

JEDEC TO-251AA

JEDEC TO-252AA

COLLECTOR

EMITTER

COLLECTOR

GATE

(FLANGE)

GATE

EMITTER

COLLECTOR

(FLANGE)

HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:

4,364,073

4,587,713

4,641,162

4,794,432

4,860,080

4,417,385

4,598,461

4,644,637

4,801,986

4,883,767

4,430,792

4,605,948

4,682,195

4,803,533

4,888,627

4,443,931

4,618,872

4,684,413

4,809,045

4,890,143

4,466,176

4,620,211

4,694,313

4,809,047

4,901,127

4,516,143

4,631,564

4,717,679

4,810,665

4,904,609

4,532,534

4,639,754

4,743,952

4,823,176

4,933,740

4,567,641

4,639,762

4,783,690

4,837,606

4,963,951

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.

File Number 4139.3

12 3 4 5 6 7...9

中文翻译

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与HGTD3N60C3S相关器件

型号	品牌	获取价格	描述	数据表
HGTD3N60C3S9A	FAIRCHILD	获取价格	6A, 600V, UFS Series N-Channel IGBTs
HGTD4N120B3	RENESAS	获取价格	1200V, N-CHANNEL IGBT, TO-251AA
HGTD4N120B3D	RENESAS	获取价格	1200V, N-CHANNEL IGBT, TO-251AA
HGTD4N120B3DS	RENESAS	获取价格	1200V, N-CHANNEL IGBT, TO-252AA
HGTD4N120B3S	RENESAS	获取价格	1200V, N-CHANNEL IGBT, TO-252AA
HGTD5N60B3	RENESAS	获取价格	600V, N-CHANNEL IGBT, TO-251AA
HGTD5N60B3D	RENESAS	获取价格	600V, N-CHANNEL IGBT, TO-251AA
HGTD5N60B3DS	RENESAS	获取价格	600V, N-CHANNEL IGBT, TO-252AA
HGTD5N60B3S	RENESAS	获取价格	600V, N-CHANNEL IGBT, TO-252AA
HGTD6N120B3	RENESAS	获取价格	1200V, N-CHANNEL IGBT, TO-251AA

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