生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE WITH BUILT-IN DIODE |
JEDEC-95代码: | TO-251AA | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HGTD5N60B3DS | RENESAS |
获取价格 |
600V, N-CHANNEL IGBT, TO-252AA | |
HGTD5N60B3S | RENESAS |
获取价格 |
600V, N-CHANNEL IGBT, TO-252AA | |
HGTD6N120B3 | RENESAS |
获取价格 |
1200V, N-CHANNEL IGBT, TO-251AA | |
HGTD6N120B3S | RENESAS |
获取价格 |
1200V, N-CHANNEL IGBT, TO-252AA | |
HGTD6N40E1 | INTERSIL |
获取价格 |
6A, 400V and 500V N-Channel IGBTs | |
HGTD6N40E1S | INTERSIL |
获取价格 |
6A, 400V and 500V N-Channel IGBTs | |
HGTD6N50E1 | INTERSIL |
获取价格 |
6A, 400V and 500V N-Channel IGBTs | |
HGTD6N50E1 | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 7.5A I(C), 500V V(BR)CES, N-Channel, TO-251AA | |
HGTD6N50E1S | INTERSIL |
获取价格 |
6A, 400V and 500V N-Channel IGBTs | |
HGTD6N50E1S | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 7.5A I(C), 500V V(BR)CES, N-Channel, TO-252AA |