Datasheet > HGP018N04A

HGP018N04A

更新时间： 2024-11-13 17:01:11

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	1304K
描述
TO-220

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HGP018N04A 数据手册

Silicon N-Channel Power MOSFET

HGP018N04A

V_DSS

General Description：

HGP018N04A, the silicon N-channel Enhanced VDMOSFETs, is

obtained by the high density Trench technology which reduce the

conduction loss, improve switching performance and enhance the

avalanche energy. This device is suitable for use as A load switch and

PWM applications. the package form is TO-220AB, which accords

with the RoHS standard.

I_{D（Silicon limited）}

I_{D（Package limited）}

280

120

201.6

1.45

mΩ

R_DS(ON)Typ

Features：

● Fast Switching

● Low ON Resistance

● Low Gate Charge

● Low Reverse transfer capacitances

● 100% Single Pulse avalanche energy Test

● Halogen Free

Applications：

Power switch circuit of adaptor and charger.

Absolute（Tj= 25℃ unless otherwise specified）：

Symbol Parameter

Rating

Units

V_DSS

Drain-to-Source Voltage

Continuous Drain Current T_C= 25 °C_{（Silicon limited）}

Continuous Drain Current T_C= 25 °C _{(Package limited)}

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current T_C= 25 °C

Gate-to-Source Voltage

280

I_D

120

480

I_DM

V_GS

±18

Avalanche Energy

781.2

E_AS

P_D

Power Dissipation T_C= 25 °C

201.6

Derating Factor above 25°C

1.61

W/℃

℃

Operating Junction and Storage Temperature Range

T_J，T_stg

150，–55 to 150

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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