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HGP028N04A PDF预览

HGP028N04A

更新时间: 2024-11-13 15:19:23
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
10页 400K
描述
TO-220

HGP028N04A 数据手册

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Silicon N-Channel Power MOSFET  
HGP028N04A  
R
General Description  
VDSS  
ID(  
40  
150  
90  
V
HGP028N04A, the silicon N-channel Enhanced  
VDMOSFETs, is obtained by the high density Trench  
technology which reduce the conduction loss, improve switching  
performance and enhance the avalanche energy. This device is  
suitable for use as a load switch and PWM applications. The  
package form is TO-220AB, which accords with the RoHS  
standard.  
A
A
Silicon limited current)  
ID(  
Package limited)  
PD  
96  
W
RDS(ON)Typ  
2.2  
m  
Features  
l Fast Switching  
l Low ON Resistance(Rdson@10v2.8m)  
l Low Gate Charge  
l Low Reverse transfer capacitances  
l 100% Single Pulse avalanche energy Test  
Applications:  
Power switch circuit of adaptor and charger.  
AbsoluteTj= 25unless otherwise specified)  
Parameter  
Symbol  
VDSS  
Rating  
Units  
Drain-to-Source Voltage  
40  
V
A
Continuous Drain Current TC = 25 °C  
Continuous Drain Current Tc= 25°C(Package Limited)  
Continuous Drain Current TC = 100 °C  
Pulsed Drain Current TC = 25 °C  
Gate-to-Source Voltage  
150  
ID  
90  
A
90  
A
a1  
360  
A
IDM  
VGS  
V
±18  
a2  
Avalanche Energy  
336  
mJ  
W
EAS  
Power Dissipation TC = 25 °C  
96  
0.77  
PD  
Derating Factor above 25°C  
W/  
Operating Junction and Storage Temperature Range  
MaximumTemperature for Soldering  
TJTstg  
15055 to 150  
300  
TL  
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10  
2019V02  

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Incremental Encode Output Type