Datasheet > HGP026N03A

HGP026N03A

更新时间： 2024-11-13 15:19:07

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	665K
描述
TO-220

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HGP026N03A 数据手册

Silicon N-Channel Power MOSFET

HGP026N03A

V_DSS

170

General Description：

HGP026N03A, the silicon N-channel Enhanced VDMOSFETs, is

obtained by the high density Trench technology which reduce the

conduction loss, improve switching performance and enhance the

avalanche energy. This device is suitable for use as A load switch and

PWM applications. the package form is TO-220AB, which accords with

the RoHS standard.

I_{D（Silicon limited）}

I_{D（Package limited）}

P_D

104.1

mΩ

R_DS(ON)Typ

Features：

●Fast Switching

●Low ON Resistance

● Low Gate Charge

●Low Reverse transfer capacitances

●100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（Tj= 25℃unless otherwise specified）：

Symbol

V_DSS

Parameter

Rating

Units

Drain-to-Source Voltage

Continuous Drain Current T_C= 25 °C_{（Silicon limited）}

Continuous Drain Current T_C= 25 °C _{(Package limited)}

Continuous Drain Current T_C= 100 °C _{(Package limited)}

Pulsed Drain Current T_C= 25 °C

Gate-to-Source Voltage

170

I_D

360

±18

287.3

104.1

0.83

I_DM

V_GS

Avalanche Energy

E_AS

Power Dissipation T_C= 25 °C

Derating Factor above 25°C

P_D

W/℃

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

T_J，T_stg

150，–55 to 150

℃

300

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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