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HFI50N06 PDF预览

HFI50N06

更新时间: 2022-12-18 01:16:46
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SEMIHOW /
页数 文件大小 规格书
8页 642K
描述
60V N-Channel MOSFET

HFI50N06 数据手册

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Electrical Characteristics TC=25 °C unless otherwise specified  
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max Units  
On Characteristics  
VGS  
--  
Gate Threshold Voltage  
V
DS = VGS, ID = 250  
2.0  
--  
4.0  
V
RDS(ON) Static Drain-Source  
On-Resistance  
VGS = 10 V, ID = 25 A  
0.018 0.022  
Off Characteristics  
BVDSS  
Drain-Source Breakdown Voltage  
V
GS = 0 V, ID = 250 ㎂  
60  
--  
--  
--  
--  
V
ΔBVDSS Breakdown Voltage Temperature  
ID = 250 , Referenced to25℃  
0.06  
V/℃  
/ΔTJ  
Coefficient  
IDSS  
V
DS = 60 V, VGS = 0 V  
--  
--  
--  
--  
1
Zero Gate Voltage Drain Current  
VDS = 48 V, TC = 150℃  
10  
IGSSF  
IGSSR  
Gate-Body Leakage Current,  
Forward  
VGS = 25 V, VDS = 0 V  
VGS = -25 V, VDS = 0 V  
--  
--  
--  
--  
100  
Gate-Body Leakage Current,  
Reverse  
-100  
Dynamic Characteristics  
Ciss  
Coss  
Crss  
Input Capacitance  
--  
--  
--  
1600 2100  
VDS = 25 V, VGS = 0 V,  
f = 1.0 MHz  
Output Capacitance  
600  
90  
780  
120  
Reverse Transfer Capacitance  
Switching Characteristics  
td(on)  
tr  
td(off)  
tf  
Turn-On Time  
--  
--  
--  
--  
--  
--  
--  
15  
105  
60  
40  
220  
130  
140  
52  
VDS = 30 V, ID = 25 A,  
Turn-On Rise Time  
Turn-Off Delay Time  
Turn-Off Fall Time  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
RG = 25 Ω  
(Note 4,5)  
65  
Qg  
Qgs  
Qgd  
40  
nC  
nC  
nC  
VDS = 48 V, ID = 50 A,  
VGS = 10 V  
10  
--  
(Note 4,5)  
17  
--  
Source-Drain Diode Maximum Ratings and Characteristics  
IS  
Continuous Source-Drain Diode Forward Current  
Pulsed Source-Drain Diode Forward Current  
--  
--  
--  
--  
--  
--  
--  
50  
200  
1.5  
--  
A
ISM  
VSD  
trr  
Source-Drain Diode Forward Voltage IS = 50 A, VGS = 0 V  
--  
V
Reverse Recovery Time  
Reverse Recovery Charge  
52  
75  
μC  
IS = 50 A, VGS = 0 V  
diF/dt = 100 A/μs (Note 4)  
--  
Qrr  
Notes ;  
1. Repetitive Rating : Pulse width limited by maximum junction temperature  
2. L=230μH, IAS=50A, VDD=25V, RG=25, Starting TJ =25°C  
3. ISD≤50A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C  
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%  
5. Essentially Independent of Operating Temperature  
SEMIHOW REV.A0,Mar 2009  

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