June 2009
BVDSS = 500 V
DS(on) typ = 1.2 Ω
R
HFW5N50S / HFI5N50S
500V N-Channel MOSFET
ID = 5.0 A
D2-PAK I2-PAK
FEATURES
Originative New Design
HFW5N50S
HFI5N50S
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 15.5 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 1.2 Ω (Typ.) @VGS=10V
100% Avalanche Tested
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
V
VDSS
Drain-Source Voltage
Drain Current
500
5.0
2.9
20
ID
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
A
Drain Current
A
IDM
VGS
EAS
IAR
Drain Current
– Pulsed
(Note 1)
A
Gate-Source Voltage
±30
300
5.0
7.3
4.5
V
Single Pulsed Avalanche Energy
Avalanche Current
(Note 2)
(Note 1)
(Note 1)
(Note 3)
mJ
A
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25℃) *
mJ
V/ns
3.13
73
W
W
Power Dissipation (TC = 25℃)
- Derate above 25℃
0.58
W/℃
℃
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
℃
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
Units
RθJC
RθJA
Junction-to-Case
--
--
--
1.71
Junction-to-Ambient*
Junction-to-Ambient
40
℃/W
62.5
RθJA
* When mounted on the minimum pad size recommended (PCB Mount)
◎ SEMIHOW REV.A0 June 2009