Datasheet > HFI50N06

HFI50N06

更新时间： 2022-12-18 01:16:46

品牌	Logo	应用领域
SEMIHOW		/
页数	文件大小	规格书
8页	642K
描述
60V N-Channel MOSFET

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数据手册

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HFI50N06 数据手册

Typical Characteristics

V_GS, Gate-Source Voltage [V]

V_DS, Drain-Source Voltage [V]

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

I_D, Drain Current [A]

V_SD, Source-Drain Voltage [V]

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

3000

2500

2000

1500

1000

500

_iss= C_gs+ C_gd(C_ds= shorted)

C_oss= C_ds+ C_gd

_rss= C_gd

V_DS= 30V

V_DS= 48V

iss

C_oss

※ Note ;

1. V_GS= 0 V

2. f = 1 MHz

rss

※ Note : I_D= 50 A

-1

10⁰

10¹

Q_G, Total Gate Charge [nC]

V_DS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

◎ SEMIHOW REV.A0,Mar 2009

1 234 5 6 7 8

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