HFB06TB120

更新时间： 2024-11-10 22:21:19

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管软恢复二极管
页数	文件大小	规格书
7页	152K
描述
Ultrafast, Soft Recovery Diode

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中文翻译

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HFB06TB120 数据手册

Bulletin PD -2.382 rev. D 12/00

HFA06TB120

HEXFRED

Ultrafast, Soft Recovery Diode

BASE

Features

CATHODE

V_R= 1200V

V_F(typ.)* = 2.4V

I_F(AV)= 6.0A

• UltrafastRecovery

• UltrasoftRecovery

• Very Low I_RRM

• Very Low Q_rr

Q_rr(typ.)=116nC

I_RRM(typ.) = 4.4A

t_rr(typ.) = 26ns

• SpecifiedatOperatingConditions

Benefits

ANODE

CATHODE

di_(rec)M/dt (typ.)* = 100A/µs

• ReducedRFIandEMI

• Reduced Power Loss in Diode and Switching

Transistor

• HigherFrequencyOperation

• ReducedSnubbing

• ReducedPartsCount

TO-220AC

Description

International Rectifier's HFA06TB120 is a state of the art ultra fast recovery diode.

Employing the latest in epitaxial construction and advanced processing techniques it

features a superb combination of characteristics which result in performance which is

unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and

6 amps continuous current, the HFA06TB120 is especially well suited for use as the

companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the

HEXFRED product line features extremely low values of peak recovery current (I_RRM

)

and does not exhibit any tendency to "snap-off" during the t_bportion of recovery. The

HEXFRED features combine to offer designers a rectifier with lower noise and

significantly lower switching losses in both the diode and the switching transistor.

These HEXFRED advantages can help to significantly reduce snubbing, component

countandheatsinksizes. TheHEXFREDHFA06TB120isideallysuitedforapplications

inpowersuppliesandpowerconversionsystems(suchasinverters), motordrives, and

many other similar applications where high speed, high efficiency is needed.

Absolute Maximum Ratings

Parameter

Max.

Units

V_R

Cathode-to-Anode Voltage

Continuous Forward Current

Single Pulse Forward Current

Maximum Repetitive Forward Current

Maximum Power Dissipation

Operating Junction and

1200

8.0

62.5

I_F@ T_C= 100°C

I_FSM

I_FRM

P_D@ T_C= 25°C

P_D@ T_C= 100°C

T_J

T_STG

-55 to +150

°C

Storage Temperature Range

* 125°C

12 3 4 5 6 7

中文翻译

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与HFB06TB120相关器件

型号	品牌	获取价格	描述	数据表
HFB06TB120PBF	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 6 A
HFB06TB120S	INFINEON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, Silicon, D2PAK-3
HFB06TB120S	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, Silicon, D2PAK-3
HFB06TB120SPBF	INFINEON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, Silicon, D2PAK-3
HFB06TB120STR	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 6 A
HFB06TB120STR	INFINEON	获取价格	Ultrafast, Soft Recovery Diode
HFB06TB120STRL	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 1200V V(RRM), Silicon, D2PAK-3
HFB06TB120STRLPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, Silicon, LEAD FREE, D2PAK-3
HFB06TB120STRPBF	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 6 A
HFB06TB120STRR	VISHAY	获取价格	暂无描述

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