HFB06TB120STR

更新时间： 2024-10-01 03:41:39

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管瞄准线超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
7页	191K
描述
Ultrafast, Soft Recovery Diode

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中文翻译

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HFB06TB120STR 数据手册

PD-96036

HFA06TB120SPbF.. Series

HEXFRED^TM

Ultrafast, Soft Recovery Diode

(K)

V_R= 1200V

V_F(typ.)* = 2.4V

I_F(AV)= 6.0A

Features

BASE

UltrafastRecovery

Ultrasoft Recovery

Very Low I_RRM

Very Low Q_rr

SpecifiedatOperatingConditions

Lead-Free

Q_rr(typ.)= 116nC

I_RRM(typ.) = 4.4A

t_rr(typ.) = 26ns

(N/C)

(A)

di_(rec)M/dt (typ.)* = 100A/µs

Benefits

Reduced RFI and EMI

Reduced Power Loss in Diode and Switching

Transistor

HigherFrequencyOperation

Reduced Snubbing

Reduced Parts Count

D²Pak

Description

International Rectifier's HFA06TB120S is a state of the art ultra fast recovery diode.

Employing the latest in epitaxial construction and advanced processing techniques it

features a superb combination of characteristics which result in performance which is

unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 6

amps continuous current, the HFA06TB120S is especially well suited for use as the

companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the

HEXFRED product line features extremely low values of peak recovery current (I_RRM) and

does not exhibit any tendency to "snap-off" during the t_bportion of recovery. The

HEXFREDfeaturescombinetoofferdesignersarectifierwithlowernoiseandsignificantly

lower switching losses in both the diode and the switching transistor. These HEXFRED

advantages can help to significantly reduce snubbing, component count and heatsink

sizes. The HEXFRED HFA06TB120S is ideally suited for applications in power supplies

and power conversion systems (such as inverters), motor drives, and many other similar

applications where high speed, high efficiency is needed.

Absolute Maximum Ratings

Parameter

Max.

Units

V_R

Cathode-to-Anode Voltage

Continuous Forward Current

Single Pulse Forward Current

Maximum Repetitive Forward Current

Maximum Power Dissipation

Operating Junction and

1200

8.0

I_F@ T_C= 100°C

I_FSM

I_FRM

P_D@ T_C= 25°C

62.5

P_D@ T_C= 100°C

T_J

-55 to +150

°C

T_STG

Storage Temperature Range

* 125°C

www.irf.com

10/07/05

12 3 4 5 6 7

中文翻译

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与HFB06TB120STR相关器件

型号	品牌	获取价格	描述	数据表
HFB06TB120STRL	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 1200V V(RRM), Silicon, D2PAK-3
HFB06TB120STRLPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, Silicon, LEAD FREE, D2PAK-3
HFB06TB120STRPBF	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 6 A
HFB06TB120STRR	VISHAY	获取价格	暂无描述
HFB06TB120STRRPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, Silicon, LEAD FREE, D2PAK-3
HFB075100A	PULSE	获取价格	HIGH FREQUENCY BALUN ADAPTOR For SMPTE-292M HDTV
HFB075100B	PULSE	获取价格	HIGH FREQUENCY BALUN ADAPTOR For SMPTE-292M HDTV
HFB08PB120	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 8 A
HFB08PB120	INFINEON	获取价格	Ultrafast, Soft Recovery Diode
HFB08PB120PBF	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 8 A

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