HFB08TB120

更新时间： 2024-09-30 22:25:11

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管功效局域网软恢复二极管
页数	文件大小	规格书
7页	133K
描述
Ultrafast, Soft Recovery Diode

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HFB08TB120 数据手册

Bulletin PD -2.383 rev. C 11/00

HFA08TB120

HEXFRED

Ultrafast, Soft Recovery Diode

BASE

CATHODE

V_R= 1200V

Features

V_F(typ.)* = 2.4V

I_{F (AV)}= 8.0A

Q_rr(typ.)=140nC

I_RRM(typ.) = 4.5A

• Ultrafast Recovery

• Ultrasoft Recovery

• Very Low I_RRM

• Very Low Q_rr

t_rr(typ.) = 28ns

di_{(rec) M}/dt (typ.)* = 85A /µs

• Specified at Operating Conditions

ANODE

CATHODE

Benefits

• Reduced RFI and EMI

• Reduced Power Loss in Diode and Switching

Transistor

• Higher Frequency Operation

• Reduced Snubbing

• Reduced Parts Count

TO-220AC

Description

International Rectifier's HFA08TB120 is a state of the art ultra fast recovery diode.

Employing the latest in epitaxial construction and advanced processing techniques it

features a superb combination of characteristics which result in performance which is

unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and

8 amps continuous current, the HFA08TB120 is especially well suited for use as the

companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the

HEXFRED product line features extremely low values of peak recovery current (I_RRM) and

does not exhibit any tendency to "snap-off" during the t_bportion of recovery. The

HEXFRED features combine to offer designers a rectifier with lower noise and significantly

lower switching losses in both the diode and the switching transistor. These HEXFRED

advantages can help to significantly reduce snubbing, component count and heatsink

sizes. The HEXFRED HFA08TB120 is ideally suited for applications in power supplies

and power conversion systems (such as inverters), motor drives, and many other similar

applications where high speed, high efficiency is needed.

Absolute Maximum Ratings

Parameter

Max

Units

V_R

Cathode-to-AnodeVoltage

ContinuousForwardCurrent

SinglePulseForwardCurrent

MaximumRepetitiveForwardCurrent

MaximumPowerDissipation

OperatingJunctionand

1200

8.0

I_F@ T_C= 100°C

I_FSM

I_FRM

130

P_D@ T_C= 25°C

73.5

P_D@ T_C= 100°C

T_J

T_STG

- 55 to 150

°C

StorageTemperatureRange

*125°C

12 3 4 5 6 7

中文翻译

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